A CMOS-compatible rib waveguide with local oxidation of silicon isolation

2007 ◽  
Author(s):  
Lynda K. Rowe ◽  
Michael Elsey ◽  
Edith Post ◽  
N. Garry Tarr ◽  
Andrew P. Knights
Keyword(s):  
Rib Waveguide ◽  
Local Oxidation ◽  
Cmos Compatible

CMOS-compatible optical rib waveguides defined by local oxidation of silicon

2007 ◽  
Vol 43 (7) ◽  
pp. 392 ◽  
Author(s):  
L.K. Rowe ◽  
M. Elsey ◽  
N.G. Tarr ◽  
A.P. Knights ◽  
E. Post
Keyword(s):  
Local Oxidation ◽  
Rib Waveguides ◽  
Cmos Compatible

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

High-performance light transmission based on graphene plasmonic waveguides

2020 ◽  
Vol 8 (20) ◽  
pp. 6832-6838 ◽  
Author(s):  
Da Teng ◽  
Kai Wang ◽  
Qiongsha Huan ◽  
Weiguang Chen ◽  
Zhe Li
Keyword(s):  
High Performance ◽  
Light Transmission ◽  
Optical Field ◽  
Plasmonic Waveguides ◽  
Rib Waveguide

Tunable ultra-deep subwavelength optical field confinement is reported by using a graphene-coated nanowire-loaded silicon nano-rib waveguide.

Advances in rib waveguide analysis using the weighted index method or the method of moments

1990 ◽  
Vol 137 (1) ◽  
pp. 27 ◽  
Author(s):  
P.C. Kendall ◽  
M.J. Robertson ◽  
P.W.A. McIlroy ◽  
S. Ritchie ◽  
M.J. Adams
Keyword(s):  
Method Of Moments ◽  
Index Method ◽  
Rib Waveguide ◽  
Weighted Index

New results for rib waveguide propagation constants

1989 ◽  
Vol 136 (2) ◽  
pp. 97 ◽  
Author(s):  
T.M. Benson ◽  
P.C. Kendall ◽  
M.S. Stern ◽  
D.A. Quinney
Keyword(s):  
Rib Waveguide ◽  
Waveguide Propagation

Pressure Sensor Monolithically Integrating MEMS and CMOS-LSI with CMOS Compatible “Back-end-of-line MEMS processes”

2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

Estimation of rib waveguide radiation losses

1988 ◽  
Vol 24 (1) ◽  
pp. 17-19 ◽  
Author(s):  
M.S. Stern ◽  
P.C. Kendall ◽  
P.N. Robson
Keyword(s):  
Rib Waveguide ◽  
Radiation Losses

Spectral index method for rib waveguide analysis

1989 ◽  
Vol 25 (2) ◽  
pp. 107 ◽  
Author(s):  
P.C. Kendall ◽  
P.W.A. Mcllroy ◽  
M.S. Stern
Keyword(s):  
Spectral Index ◽  
Index Method ◽  
Rib Waveguide
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