CMOS-compatible optical rib waveguides defined by local oxidation of silicon

2007 ◽  
Vol 43 (7) ◽  
pp. 392 ◽  
Author(s):  
L.K. Rowe ◽  
M. Elsey ◽  
N.G. Tarr ◽  
A.P. Knights ◽  
E. Post
Keyword(s):  
Local Oxidation ◽  
Rib Waveguides ◽  
Cmos Compatible

Adiabatic Passage of Light in CMOS-Compatible Silicon Oxide Integrated Rib Waveguides

2012 ◽  
Vol 24 (7) ◽  
pp. 536-538 ◽  
Author(s):  
Ricard Menchon-Enrich ◽  
Andreu Llobera ◽  
Victor J. Cadarso ◽  
Jordi Mompart ◽  
Veronica Ahufinger
Keyword(s):  
Silicon Oxide ◽  
Adiabatic Passage ◽  
Rib Waveguides ◽  
Cmos Compatible

A CMOS-compatible rib waveguide with local oxidation of silicon isolation

2007 ◽  
Author(s):  
Lynda K. Rowe ◽  
Michael Elsey ◽  
Edith Post ◽  
N. Garry Tarr ◽  
Andrew P. Knights
Keyword(s):  
Rib Waveguide ◽  
Local Oxidation ◽  
Cmos Compatible

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Analysis of the spectral index method for vector modes of rib waveguides

1990 ◽  
Vol 137 (1) ◽  
pp. 21 ◽  
Author(s):  
M.S. Stern ◽  
P.C. Kendall ◽  
P.W.A. McLlroy
Keyword(s):  
Spectral Index ◽  
Index Method ◽  
Rib Waveguides

Pressure Sensor Monolithically Integrating MEMS and CMOS-LSI with CMOS Compatible “Back-end-of-line MEMS processes”

2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

Novel method for analysis of curved optical rib-waveguides

1989 ◽  
Vol 25 (4) ◽  
pp. 278 ◽  
Author(s):  
J.S. Gu ◽  
P.A. Besse ◽  
H. Melchior
Keyword(s):  
Rib Waveguides ◽  
Novel Method

A CMOS-compatible high-speed silicon lateral trench photodetector

2002 ◽  
Author(s):  
M. Yang ◽  
K. Rim ◽  
D. Rogers ◽  
J. Schaub ◽  
J. Welser ◽  
...  
Keyword(s):  
High Speed ◽  
Cmos Compatible

scholarly journals NDIR CO2 gas sensing using CMOS compatible MEMS ScAlN-based pyroelectric detector

2021 ◽  
pp. 130437
Author(s):  
Doris Keh Ting Ng ◽  
Chong Pei Ho ◽  
Linfang Xu ◽  
Weiguo Chen ◽  
Yuan Hsing Fu ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Pyroelectric Detector ◽  
Co2 Gas ◽  
Cmos Compatible
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