A thin FinFET Si-fin body structure fabricated with 193nm scanner photolithography and composite hard mask etching technique upon bulk-Si substrate

2007 ◽  
Author(s):  
Wen-Shiang Liao ◽  
Yu-Huan Liu ◽  
Wen-Tung Chang ◽  
Tung-Hung Chen ◽  
Tommy Shih ◽  
...  
Keyword(s):  
Body Structure ◽  
Si Substrate ◽  
Etching Technique ◽  
Hard Mask ◽  
Mask Etching

A thick CESL stressed ultra-small (Lg=40nm) SiGe-channel MOSFET fabricated with 193nm scanner lithography and TEOS hard mask etching

2007 ◽  
Author(s):  
Wen-Shiang Liao ◽  
Tung-Hung Chen ◽  
Hsin-Hung Lin ◽  
Wen-Tung Chang ◽  
Tommy Shih ◽  
...  
Keyword(s):  
Hard Mask ◽  
Mask Etching

The Role of Oxygen on Anisotropy in Chromium Oxide Hard Mask Etching for Sub-Micron Fabrication

2021 ◽  
Vol 20 ◽  
pp. 33-38
Author(s):  
Huseyin Ekinci ◽  
Navid M.S. Jahed ◽  
Mohammad Soltani ◽  
Bo Cui
Keyword(s):  
Chromium Oxide ◽  
Hard Mask ◽  
Mask Etching

Fabrication of Nanometer Sized Si Dot Arrays Using Ar Ion Milling with Calixarene Resist Dot Arrays

2010 ◽  
Vol 459 ◽  
pp. 116-119 ◽  
Author(s):  
Takuro Tamura ◽  
Yasunari Tanaka ◽  
Takashi Akahane ◽  
You Yin ◽  
Sumio Hosaka
Keyword(s):  
Electron Beam ◽  
Dry Etching ◽  
Ion Milling ◽  
Si Substrate ◽  
Etching Technique ◽  
Nano Scale ◽  
Vertical Milling ◽  
Scale Structures ◽  
20 Nm

In this study, we investigated the possibility of forming the fine Si dot arrays by means of electron beam (EB) lithography and dry etching technique for the future’s devices with nano-scale structures. We examined the properties of Ar ion milling for the fabrication of nanometer sized Si dot arrays on a Si substrate. We have succeeded in forming 40 nm pitched Si dot arrays with a diameter of <20 nm using dot array patterns of the calixarene resist as a mask. We also obtained the Ar ion milling property that there exists the horizontal milling rate as well as the vertical milling rate. We formed Si dot arrays with a dot diameter of about 10 nm using this property. It was clarified that Ar ion milling and EB lithography with calixarene resist has the potential to form Si nano dot arrays for the nano devices.

Structural and Morphological Properties of Nano Photonic Silicon Structure for Photonics Applications

2020 ◽  
Vol 398 ◽  
pp. 29-33 ◽  
Author(s):  
Mariam M. Hassan ◽  
Makram A. Fakhri ◽  
Salah Aldeen Adnan
Keyword(s):  
Porous Silicon ◽  
Surface Morphology ◽  
Pore Diameter ◽  
Electrochemical Etching ◽  
Morphological Properties ◽  
Etching Time ◽  
Silicon Structure ◽  
Si Substrate ◽  
Etching Technique ◽  
Structure Surface

Porous silicon (n-PS) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. We studies the structure, surface morphology, pore diameter, roughness, based on (XRD), (AFM), (SEM) at different etching time (5, 10 min) and current (10mA/cm2).

A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching

2002 ◽  
Vol 46 (3) ◽  
pp. 349-352 ◽  
Author(s):  
C. Caillat ◽  
S. Deleonibus ◽  
G. Guegan ◽  
M. Heitzmann ◽  
M.E. Nier ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Gate Length ◽  
Hard Mask ◽  
Mask Etching ◽  
20 Nm

Improved Observation Contrast of Block-Copolymer Nanodot Pattern Using Carbon Hard Mask (CHM)

2013 ◽  
Vol 534 ◽  
pp. 126-130 ◽  
Author(s):  
Takashi Akahane ◽  
Takuya Komori ◽  
Jing Liu ◽  
Miftakhul Huda ◽  
Zulfakri bin Mohamad ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Carbon Film ◽  
Pattern Transfer ◽  
Si Substrate ◽  
Hard Mask ◽  
Dimethyl Siloxane ◽  
Transfer Pattern

In this work, improvement of the observation contrast was investigated by using a carbon film as the hard mask for pattern transfer of block copolymer (BCP) nanodots. The PS-PDMS (Poly (styrene-b-dimethyl siloxane)) block copolymer was adopted here. The observation contrast was greatly improved after transferring block copolymer (BCP) nanodots pattern to the underlying Si substrate through the carbon hard mask compared that before nanodot pattern transfer. Pattern transfer was also demonstrated to be very effective using carbon hard mask.

Fabricating Metal Patterned Ceramic Substance by Tape-Casting

2007 ◽  
Vol 280-283 ◽  
pp. 757-758
Author(s):  
Li Feng Hao ◽  
Ji Zhou ◽  
Bo Li ◽  
Long Tu Li
Keyword(s):  
Printed Circuit Boards ◽  
Ceramic Body ◽  
Tape Casting ◽  
Experimental Result ◽  
Microwave Antenna ◽  
Shadow Mask ◽  
Circuit Boards ◽  
Etching Technique ◽  
Printed Circuit ◽  
Mask Etching

Tape-casting technology is introduced to fabricate metal-arrayes patterned ceramic substance containing periodic multilayer silver wire structure in the low dielectric constant ceramic matrix for microvave bandgap materials and left hand material application. One important advantage of the metal patterned ceramic substance comparing with the periodic structures fabricated on the printed circuit boards (PCB) using a shadow mask/etching technique is that complex multilayer structure can be designed and fabricated in the ceramic body as well as on the surface by the tape-casting process, while the shadow mask/etching technique technology can only design patterns on the surface of printed circuit boards. An Hp8720ES network analyzer was used to measure the transmission properties of the metal patterned ceramic substance. The experimental result shows some novel properties at X-band microwave frequencies. The metal patterned ceramic substance can be used in the microwave communication, such as microwave antenna.

Precise Control and Resizing of Polysilicon Gate Length by Hard-Mask Etching

1998 ◽  
Vol 37 (Part 1, No. 10) ◽  
pp. 5519-5525 ◽  
Author(s):  
Masaaki Sato ◽  
Yoshio Kawai
Keyword(s):  
Gate Length ◽  
Hard Mask ◽  
Precise Control ◽  
Polysilicon Gate ◽  
Mask Etching
Sign in / Sign up

Export Citation Format

Share Document