Application of full-chip optical proximity correction for sub-60-nm memory device in polarized illumination

2007 ◽  
Author(s):  
Hyoung-Soon Yune ◽  
Yeong-Bae Ahn ◽  
Dong-jin Lee ◽  
James Moon ◽  
Byung-Ho Nam ◽  
...  
Keyword(s):  
Memory Device ◽  
Optical Proximity Correction

Application of full-chip level optical proximity correction to memory device with sub-0.10-μm design rule and ArF lithography

2001 ◽  
Author(s):  
Hyoung-Soon Yune ◽  
Hee-Bom Kim ◽  
Wan-Ho Kim ◽  
Chang-Nam Ahn ◽  
Young-Mog Ham ◽  
...  
Keyword(s):  
Memory Device ◽  
Design Rule ◽  
Optical Proximity Correction

Read and Write Operations of Memory Device Consisting of Nonlinear MEMS Resonator

2014 ◽  
Vol 1 ◽  
pp. 352-355 ◽  
Author(s):  
Atsushi YAO ◽  
Takashi HIKIHARA
Keyword(s):  
Memory Device ◽  
Mems Resonator

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Localization Techniques on a 0.15um CMOS Device: Charge Pump Failure Analysis

2002 ◽  
Author(s):  
Hui Pan ◽  
Thomas Gibson
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Charge Pump ◽  
Front Side ◽  
Pump Failure ◽  
Electrical Failure ◽  
Optical Proximity Correction ◽  
A Charge

Abstract In recent years, there have been many advances in the equipment and techniques used to isolate faults. There are many options available to the failure analyst. The available techniques fall into the categories of electrical, photonic, thermal and electron/ion beam [1]. Each technique has its advantages and its limitations. In this paper, we introduce a case of successful failure analysis using a combination of several fault localization techniques on a 0.15um CMOS device with seven layers of metal. It includes electrical failure mode characterization, front side photoemission, backside photoemission, Focused Ion Beam (FIB), Scanning Electron Microscope (SEM) and liquid crystal. Electrical characterization along with backside photoemission proved most useful in this case as a poly short problem was found to be causing a charge pump failure. A specific type of layout, often referred to as a hammerhead layout, and the use of Optical Proximity Correction (OPC) contributed to the poly level shorts.

Application of EMS Analysis to Failure in Cell Area of Memory Device

1998 ◽  
Author(s):  
T. Nukumizu ◽  
J. Sato ◽  
H. Furuya ◽  
H. Namba ◽  
T. Kikuch
Keyword(s):  
Failure Analysis ◽  
Memory Device ◽  
Cell Area

Abstract EMS analysis is widely used in the failure analysis of the semiconductor. Moreover, the availability is widely evaluated. However, EMS analysis is not often used for the defect (1 Bit failure, Word Line failure, Bit Line failure, etc.) in the cell area in the memory device, because information on Fail Bit Map can be facilitated. Recently, make minutely advancing, and it is impossible to detect the defective cause only by Fail Bit Map information. We found the effectiveness as follows by the use of EMS analysis for a defective sample with Fail Bit Map information to solve such a problem. It leads to shortening analysis TAT because a defective part can be specified. Moreover, because the SHORT/OPEN mode can be divided, it is useful for the presumption of a defective mode. Furthermore, it is effective also to the confirmation of the presence of the redundancy and the confirmation of Fail Bit Map. Thus, because the application of EMS analysis for the defect in the cell area of the memory device is very effective to detect a defective cause, I want to recommend it by all means.

Improvement of reliability of polymer nanocomposite based transparent memory device by oxygen vacancy rich ZnO nanorods

2016 ◽  
Vol 164 ◽  
pp. 53-58 ◽  
Author(s):  
Snigdha Bhattacharjee ◽  
Pranab Kumar Sarkar ◽  
Nandini Roy ◽  
Asim Roy
Keyword(s):  
Oxygen Vacancy ◽  
Zno Nanorods ◽  
Polymer Nanocomposite ◽  
Memory Device

scholarly journals Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device

Metals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 1199
Author(s):  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
High Resistance State ◽  
Long Term Potentiation ◽  
Memory Device ◽  
Bipolar Resistive Switching ◽  
Term Potentiation ◽  
Resistance State ◽  
Neuromorphic System

This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

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