Modeling spatial gate length variation in the 0.2μm to 1.15mm separation range

2007 ◽  
Author(s):  
Paul Friedberg ◽  
Willy Cheung ◽  
George Cheng ◽  
Qian Ying Tang ◽  
Costas J. Spanos
Keyword(s):  
Length Variation ◽  
Gate Length

scholarly journals Design Consideration and Impact of Gate Length Variation on Junctionless Strained Double Gate MOSFET

2019 ◽  
Vol 8 (2S6) ◽  
pp. 783-791
Keyword(s):  
Field Effect Transistors ◽  
Scaling Limit ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Length Variation ◽  
Gate Length ◽  
Double Gate ◽  
Simulation Design ◽  
Short Channel ◽  
Fully Depleted

Aggressive scaling of Metal-oxide-semiconductor Field Effect Transistors (MOSFET) have been conducted over the past several decades and now is becoming more intricate due to its scaling limit and short channel effects (SCE). To overcome this adversity, a lot of new transistor structures have been proposed, including multi gate structure, high-k/metal gate stack, strained channel, fully-depleted body and junctionless configuration. This paper describes a comprehensive 2-D simulation design of a proposed transistor that employs all the aforementioned structures, named as Junctionless Strained Double Gate MOSFETs (JLSDGM). Variation in critical design parameter such as gate length (Lg ) is considered and its impact on the output properties is comprehensively investigated. The results shows that the variation in gate length (Lg ) does contributes a significant impact on the drain current (ID), on-current (ION), off-current (IOFF), ION/IOFF ratio, subthreshold swing (SS) and transconductance (gm). The JLSDGM device with the least investigated gate length (4nm) still provides remarkable device properties in which both ION and gm(max) are measured at 1680 µA/µm and 2.79 mS/µm respectively

Simulation study on NMOS gate length variation using TCAD tool

2009 ◽  
Author(s):  
Rahmat Sanudin ◽  
Muhammad Suhaimi Sulong ◽  
Marlia Morsin ◽  
Mohd Helmy Abd Wahab
Keyword(s):  
Simulation Study ◽  
Length Variation ◽  
Gate Length

Spatial modeling of micron-scale gate length variation

2006 ◽  
Author(s):  
Paul Friedberg ◽  
Willy Cheung ◽  
Costas J. Spanos
Keyword(s):  
Spatial Modeling ◽  
Length Variation ◽  
Gate Length

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

2011 ◽  
Vol 88 (4) ◽  
pp. 370-372 ◽  
Author(s):  
M. Gassoumi ◽  
M.M. Ben Salem ◽  
S. Saadaoui ◽  
B. Grimbert ◽  
J. Fontaine ◽  
...  
Keyword(s):  
Transient Response ◽  
Length Variation ◽  
Gate Length ◽  
Trapping Effects

scholarly journals Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PLoS ONE ◽  
2013 ◽  
Vol 8 (12) ◽  
pp. e82731 ◽  
Author(s):  
Mohd F. Mohd Razip Wee ◽  
Arash Dehzangi ◽  
Sylvain Bollaert ◽  
Nicolas Wichmann ◽  
Burhanuddin Y. Majlis
Keyword(s):  
Length Variation ◽  
Gate Length

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 035009 ◽  
Author(s):  
N Ketteniss ◽  
H Behmenburg ◽  
F Lecourt ◽  
N Defrance ◽  
V Hoel ◽  
...  
Keyword(s):  
Length Variation ◽  
Gate Length ◽  
Gan Hfet

On the Crystal Chemistry of Inorganic Nitrides: Crystal-Chemical Parameters and Opportunities in the Exploration of Their Compositional Space

2020 ◽  
Author(s):  
Olivier Charles Gagné
Keyword(s):  
Functional Properties ◽  
A Priori ◽  
Lone Pair ◽  
Length Variation ◽  
Electronic Effects ◽  
Statistical Knowledge ◽  
Redox Active ◽  
Multiply Bonded ◽  
Jahn Teller ◽  
Compositional Space

The scarcity of nitrogen in Earth’s crust, combined with challenging synthesis, have made inorganic nitrides a relatively-unexplored class of compounds compared to their naturally-abundant oxide counterparts. To facilitate exploration of their compositional space via <i>a priori</i> modeling, and to help <i>a posteriori</i> structure verification not limited to inferring the oxidation state of redox-active cations, we derive a suite of bond-valence parameters and Lewis-acid strength values for 76 cations observed bonding to N<sup>3-</sup>, and further outline a baseline statistical knowledge of bond lengths for these compounds. We examine structural and electronic effects responsible for the functional properties and anomalous bonding behavior of inorganic nitrides, and identify promising venues for exploring uncharted compositional spaces beyond the reach of high-throughput computational methods. We find that many mechanisms of bond-length variation ubiquitous to oxide and oxysalt compounds (e.g., lone-pair stereoactivity, the Jahn-Teller and pseudo Jahn-Teller effects) are similarly pervasive in inorganic nitrides, and are occasionally observed to result in greater distortion magnitude than their oxide counterparts. We identify inorganic nitrides with multiply-bonded metal ions as a promising venue in heterogeneous catalysis, e.g. in the development of a post-Haber-Bosch process proceeding at milder reaction conditions, thus representing further opportunity in the thriving exploration of the functional properties of this emerging class of materials.<br>

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