Spatial modeling of micron-scale gate length variation

2006 ◽  
Author(s):  
Paul Friedberg ◽  
Willy Cheung ◽  
Costas J. Spanos
Keyword(s):  
Spatial Modeling ◽  
Length Variation ◽  
Gate Length

scholarly journals Design Consideration and Impact of Gate Length Variation on Junctionless Strained Double Gate MOSFET

2019 ◽  
Vol 8 (2S6) ◽  
pp. 783-791
Keyword(s):  
Field Effect Transistors ◽  
Scaling Limit ◽  
Drain Current ◽  
Oxide Semiconductor ◽  
Length Variation ◽  
Gate Length ◽  
Double Gate ◽  
Simulation Design ◽  
Short Channel ◽  
Fully Depleted

Aggressive scaling of Metal-oxide-semiconductor Field Effect Transistors (MOSFET) have been conducted over the past several decades and now is becoming more intricate due to its scaling limit and short channel effects (SCE). To overcome this adversity, a lot of new transistor structures have been proposed, including multi gate structure, high-k/metal gate stack, strained channel, fully-depleted body and junctionless configuration. This paper describes a comprehensive 2-D simulation design of a proposed transistor that employs all the aforementioned structures, named as Junctionless Strained Double Gate MOSFETs (JLSDGM). Variation in critical design parameter such as gate length (Lg ) is considered and its impact on the output properties is comprehensively investigated. The results shows that the variation in gate length (Lg ) does contributes a significant impact on the drain current (ID), on-current (ION), off-current (IOFF), ION/IOFF ratio, subthreshold swing (SS) and transconductance (gm). The JLSDGM device with the least investigated gate length (4nm) still provides remarkable device properties in which both ION and gm(max) are measured at 1680 µA/µm and 2.79 mS/µm respectively

Simulation study on NMOS gate length variation using TCAD tool

2009 ◽  
Author(s):  
Rahmat Sanudin ◽  
Muhammad Suhaimi Sulong ◽  
Marlia Morsin ◽  
Mohd Helmy Abd Wahab
Keyword(s):  
Simulation Study ◽  
Length Variation ◽  
Gate Length

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

2011 ◽  
Vol 88 (4) ◽  
pp. 370-372 ◽  
Author(s):  
M. Gassoumi ◽  
M.M. Ben Salem ◽  
S. Saadaoui ◽  
B. Grimbert ◽  
J. Fontaine ◽  
...  
Keyword(s):  
Transient Response ◽  
Length Variation ◽  
Gate Length ◽  
Trapping Effects

Modeling spatial gate length variation in the 0.2μm to 1.15mm separation range

2007 ◽  
Author(s):  
Paul Friedberg ◽  
Willy Cheung ◽  
George Cheng ◽  
Qian Ying Tang ◽  
Costas J. Spanos
Keyword(s):  
Length Variation ◽  
Gate Length

scholarly journals Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

PLoS ONE ◽  
2013 ◽  
Vol 8 (12) ◽  
pp. e82731 ◽  
Author(s):  
Mohd F. Mohd Razip Wee ◽  
Arash Dehzangi ◽  
Sylvain Bollaert ◽  
Nicolas Wichmann ◽  
Burhanuddin Y. Majlis
Keyword(s):  
Length Variation ◽  
Gate Length

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

2012 ◽  
Vol 27 (3) ◽  
pp. 035009 ◽  
Author(s):  
N Ketteniss ◽  
H Behmenburg ◽  
F Lecourt ◽  
N Defrance ◽  
V Hoel ◽  
...  
Keyword(s):  
Length Variation ◽  
Gate Length ◽  
Gan Hfet

Using Spatial Modeling to Improve Wetland Inventories in Great Smoky Mountains National Park

2019 ◽  
Vol 39 (4) ◽  
pp. 482
Author(s):  
Alix A. Pfennigwerth ◽  
Joshua Albritton ◽  
Troy Evans
Keyword(s):  
Spatial Modeling ◽  
National Park ◽  
Great Smoky Mountains ◽  
Smoky Mountains
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