Design and characterization of an out-of-plane polymer waveguide grating coupler

Author(s):  
Jeong Su Yang ◽  
Chul Hyun Choi ◽  
Beom-hoan O ◽  
Seung Gol Lee ◽  
El-Hang Lee
1988 ◽  
Vol 53 (21) ◽  
pp. 2011-2013 ◽  
Author(s):  
R. Burzynski ◽  
B. P. Singh ◽  
P. N. Prasad ◽  
R. Zanoni ◽  
G. I. Stegeman

2020 ◽  
Vol 463 ◽  
pp. 125418 ◽  
Author(s):  
Yan Xu ◽  
Fei Wang ◽  
Yang Gao ◽  
Wei Chen ◽  
Changming Chen ◽  
...  

2019 ◽  
Vol 48 (4) ◽  
pp. 422001
Author(s):  
吴少强 Wu Shaoqiang ◽  
冯向华 Feng Xianghua ◽  
卫正统 Wei Zhengtong ◽  
吴天昊 Wu Tianhao

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jianxun Hong ◽  
Andrew M. Spring ◽  
Feng Qiu ◽  
Shiyoshi Yokoyama

Abstract We propose a high efficiency apodized grating coupler with a bottom reflector for silicon nitride photonic integrated circuits. The reflector consists of a stack of alternate silicon nitride and silicon dioxide quarter-wave films. The design, fabrication and optical characterization of the couplers has been presented. The measured fiber to detector insertion loss was −3.5 dB which corresponds to a peak coupling efficiency of −1.75 dB. A 3 dB wavelength bandwidth of 76.34 nm was demonstrated for the grating coupler with a 20-layer reflector. The fabrication process is CMOS-compatible and requires only a single etching step.


1999 ◽  
Vol 607 ◽  
Author(s):  
L. Bürkle ◽  
F. Fuchs ◽  
R. Kiefer ◽  
W. Pletschen ◽  
R. E. Sah ◽  
...  

AbstractInAs/(GaIn)Sb superlattice photodiodes with a cutoff wavelength of 8.711μm show adynamic impedance of R0A= 1.5 kωcm2at 77 K and a responsivity of 2 A/W, corresponding to a detectivity of D*= 1 x 1012 cmv√Hz/W. Diffusion limited performance is observed above 100 K. At lower temperatures the diodesare limited by generation-recombination currents. An analysis of the influence of different diode sidewall passivations on the surface contribution to the diode leakage current is presented. The out-of-plane electron mobility as well as the relative contributions of the electron and hole diffusion currents to the diode current were determined by a measurement of the magnetic field dependence of the reverse saturation current density of the diodes


2005 ◽  
Vol 44 (17) ◽  
pp. 3442 ◽  
Author(s):  
Yi-Ping Wang ◽  
Jian-Ping Chen ◽  
Xin-Wan Li ◽  
Jun-He Zhou ◽  
Hao Shen ◽  
...  

2016 ◽  
Vol 34 (17) ◽  
pp. 3966-3971 ◽  
Author(s):  
Christoph Prokop ◽  
Steffen Schoenhardt ◽  
Bert Laegel ◽  
Sandra Wolff ◽  
Arnan Mitchell ◽  
...  

1995 ◽  
Vol 384 ◽  
Author(s):  
M.R. Visokay ◽  
R. Sinclair

ABSTRACTFePt alloy films were deposited at 50 and 49°C onto amorphous SiO2 and single crystal [001] MgO and [0001] Al2O3 using DC magnetron cosputtering, resulting in polycrystalline and [001] and [111] epitaxial films, respectively. High temperature deposition resulted in ordered films with the tetragonal Ll structure and out-of-plane magnetic easy axes while low temperature deposition yielded chemically disordered fcc alloys with in-plane easy axes. Significant modification of the magneto-optic Kerr spectrum is observed for ordered relative to disordered alloys for all orientations. The Kerr rotation has a strong orientation dependence for the ordered, but not disordered films.


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