Low-loss, low-voltage, AlGaAs/GaAs high speed optical switch with doping and composition graded heterojunction interfaces

2007 ◽  
Author(s):  
Liping Sun ◽  
Julian Noad ◽  
Robert James ◽  
David Coulas ◽  
Shaochun Cao ◽  
...  
Keyword(s):  
High Speed ◽  
Low Voltage ◽  
Optical Switch ◽  
Low Loss

A high-speed low-voltage stress-induced micromachined 2 x 2 optical switch

1999 ◽  
Vol 11 (11) ◽  
pp. 1396-1398 ◽  
Author(s):  
R.T. Chen ◽  
H. Nguyen ◽  
M.C. Wu
Keyword(s):  
High Speed ◽  
Low Voltage ◽  
Optical Switch ◽  
Voltage Stress

Scalable Active Optical Access Network Using Variable High-Speed PLZT Optical Switch/Splitter

2012 ◽  
Vol E95-B (3) ◽  
pp. 730-739 ◽  
Author(s):  
Kunitaka ASHIZAWA ◽  
Takehiro SATO ◽  
Kazumasa TOKUHASHI ◽  
Daisuke ISHII ◽  
Satoru OKAMOTO ◽  
...  
Keyword(s):  
High Speed ◽  
Optical Switch ◽  
Access Network ◽  
Optical Access ◽  
Optical Access Network

Low loss fibre transmission of high speed pulse signals at 1.29 μm wavelength

1978 ◽  
Vol 14 (6) ◽  
pp. 187 ◽  
Author(s):  
Masatoshi Saruwatari ◽  
Koichi Asatani ◽  
Jun-Ichi Yamada ◽  
Iwao Hatakeyama ◽  
Koichi Sugiyama ◽  
...  
Keyword(s):  
High Speed ◽  
Low Loss ◽  
Fibre Transmission

Practical low voltage 2×2 polarisation independent LiNbO3 digital optical switch

1991 ◽  
Vol 27 (12) ◽  
pp. 1025 ◽  
Author(s):  
A. McGuire ◽  
M. Scott ◽  
A.P. Thomas ◽  
R.C. Booth
Keyword(s):  
Low Voltage ◽  
Optical Switch

scholarly journals Graphene Nanoribbon Gap Waveguides for Dispersionless and Low-Loss Propagation with Deep-Subwavelength Confinement

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1302
Author(s):  
Zhiyong Wu ◽  
Lei Zhang ◽  
Tingyin Ning ◽  
Hong Su ◽  
Irene Ling Li ◽  
...  
Keyword(s):  
High Performance ◽  
Chemical Potential ◽  
Shape Change ◽  
Optical Switch ◽  
Pulse Amplitude ◽  
Propagation Distance ◽  
Graphene Nanoribbon ◽  
Low Loss ◽  
High Loss ◽  
On Chip

Surface plasmon polaritons (SPPs) have been attracting considerable attention owing to their unique capabilities of manipulating light. However, the intractable dispersion and high loss are two major obstacles for attaining high-performance plasmonic devices. Here, a graphene nanoribbon gap waveguide (GNRGW) is proposed for guiding dispersionless gap SPPs (GSPPs) with deep-subwavelength confinement and low loss. An analytical model is developed to analyze the GSPPs, in which a reflection phase shift is employed to successfully deal with the influence caused by the boundaries of the graphene nanoribbon (GNR). It is demonstrated that a pulse with a 4 μm bandwidth and a 10 nm mode width can propagate in the linear passive system without waveform distortion, which is very robust against the shape change of the GNR. The decrease in the pulse amplitude is only 10% for a propagation distance of 1 μm. Furthermore, an array consisting of several GNRGWs is employed as a multichannel optical switch. When the separation is larger than 40 nm, each channel can be controlled independently by tuning the chemical potential of the corresponding GNR. The proposed GNRGW may raise great interest in studying dispersionless and low-loss nanophotonic devices, with potential applications in the distortionless transmission of nanoscale signals, electro-optic nanocircuits, and high-density on-chip communications.

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

scholarly journals Reliability-Oriented Design of Inverter-Fed Low-Voltage Electrical Machines: Potential Solutions

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4144
Author(s):  
Yatai Ji ◽  
Paolo Giangrande ◽  
Vincenzo Madonna ◽  
Weiduo Zhao ◽  
Michael Galea
Keyword(s):  
Power Density ◽  
High Speed ◽  
High Performance ◽  
Low Voltage ◽  
Electrical Machines ◽  
Design Stage ◽  
Switching Frequency ◽  
Special Focus ◽  
Electrical Machine ◽  
Engineering Approach

Transportation electrification has kept pushing low-voltage inverter-fed electrical machines to reach a higher power density while guaranteeing appropriate reliability levels. Methods commonly adopted to boost power density (i.e., higher current density, faster switching frequency for high speed, and higher DC link voltage) will unavoidably increase the stress to the insulation system which leads to a decrease in reliability. Thus, a trade-off is required between power density and reliability during the machine design. Currently, it is a challenging task to evaluate reliability during the design stage and the over-engineering approach is applied. To solve this problem, physics of failure (POF) is introduced and its feasibility for electrical machine (EM) design is discussed through reviewing past work on insulation investigation. Then the special focus is given to partial discharge (PD) whose occurrence means the end-of-life of low-voltage EMs. The PD-free design methodology based on understanding the physics of PD is presented to substitute the over-engineering approach. Finally, a comprehensive reliability-oriented design (ROD) approach adopting POF and PD-free design strategy is given as a potential solution for reliable and high-performance inverter-fed low-voltage EM design.

scholarly journals Advanced Electrode Design for Low-Voltage High-Speed Thin-Film Lithium Niobate Modulators

2021 ◽  
Vol 13 (2) ◽  
pp. 1-9
Author(s):  
Xingrui Huang ◽  
Yang Liu ◽  
Zezheng Li ◽  
Huan Guan ◽  
Qingquan Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Speed ◽  
Low Voltage ◽  
Electrode Design
Sign in / Sign up

Export Citation Format

Share Document