Spectral response characteristics of concave grating demultiplexer

2006 ◽  
Author(s):  
Fuyuan Guo ◽  
Minghua Wang
Keyword(s):  
Spectral Response ◽  
Response Characteristics ◽  
Concave Grating

Two-dimensional a-Si:H/a-SiC:H n-i-p sensor array with ITO/a-SiNx antireflection coating

2005 ◽  
Vol 862 ◽  
Author(s):  
Yu. Vygranenko ◽  
J. H. Chang ◽  
A. Nathan
Keyword(s):  
Reverse Bias ◽  
Spectral Response ◽  
Charge Trapping ◽  
Optical Excitation ◽  
Antireflection Coating ◽  
Two Dimensional ◽  
Device Structure ◽  
Response Characteristics ◽  
Photodiode Array

AbstractThis paper presents a two-dimensional a–Si:H/a-SiC:H n–i–p photodiode array with switching diode readout, developed specifically for fluorescence-based bio-assays. Both device structure and fabrication processing has enabled enhancement of the external quantum efficiency of the encapsulated device up to 80%, reduction of the photodiode leakage down to 10 pA/cm2 at -1V reverse bias, and increase of the rectification current ratio of the switching diodes up to 109. The critical fabrication issues associated with deposition of device-quality materials, tailoring of defects at the i–p interface, device patterning with dry etching, junction passivation, and contact formation will be discussed. Both sensing and switching diodes were characterized. While the observed dark current in the photodiodes at low reverse bias voltages is primarily due to carrier emission from deep states in the a–Si:H bulk, the leakage in the small switching diodes stems from peripheral defects along junction sidewalls. Optical losses in the photodiodes with ITO/a–SiNx:H antireflection coating were evaluated using numerical modeling, and the calculated transmission spectra correlated well with the spectral response characteristics. Measurements of the charge transfer time and output linearity demonstrated the efficiency of the single-switching diode readout configuration. The response of the array to optical excitation was also investigated. The observed long term retardation in the signal rise and decay at illumination levels less than 1010 photons/cm2-s can be associated with charge trapping in the undoped layer.

scholarly journals InAs/InAsSb Strain-Balanced Superlattices for Longwave Infrared Detectors

Sensors ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 1907 ◽  
Author(s):  
Tetiana Manyk ◽  
Krystian Michalczewski ◽  
Krzysztof Murawski ◽  
Piotr Martyniuk ◽  
Jaroslaw Rutkowski
Keyword(s):  
Wave Function ◽  
Infrared Detectors ◽  
Theoretical Calculations ◽  
Spectral Response ◽  
Health Condition ◽  
Type Ii ◽  
Response Characteristics ◽  
Effective Masses ◽  
Gaas Substrates ◽  
The Stability

The InAs/InAsSb type-II superlattices (T2SLs) grown on a GaSb buffer layer and GaAs substrates were theoretically investigated. Due to the stability at high operating temperatures, T2SLs could be used for detectors operating in the longwave infrared (LWIR) range for different sensors to include, e.g., CH4 and C2H6 detection, which is very relevant for health condition monitoring. The theoretical calculations were carried out by the 8 × 8 k·p method. The estimated electrons and heavy holes probability distribution in a InAs/InAsSb superlattice (SL) shows that the wave function overlap increases while the thickness of the SL period decreases. The change in the effective masses for electrons and holes versus the SL period thickness for the kz-direction of the Brillouin zone is shown. The structures with a period lower than 15 nm are more optimal for the construction of LWIR detectors based on InAs/InAsSb SLs. The experimental results of InAs/InAsSb T2SLs energy bandgap were found to be comparable with the theoretical one. The proper fitting of theoretically calculated and experimentally measured spectral response characteristics in terms of a strain-balanced and unbalanced structures is shown.

scholarly journals Study of spectral response characteristics of negative electron affinity GaN photocathode

2010 ◽  
Vol 59 (5) ◽  
pp. 3577
Author(s):  
Qiao Jian-Liang ◽  
Chang Ben-Kang ◽  
Qian Yun-Sheng ◽  
Du Xiao-Qing ◽  
Zhang Yi-Jun ◽  
...  
Keyword(s):  
Electron Affinity ◽  
Spectral Response ◽  
Negative Electron Affinity ◽  
Response Characteristics
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