Zinc-oxide based nano-composite field effect transistor devices

2006 ◽  
Author(s):  
V. A. L. Roy ◽  
Zong-Xiang Xu ◽  
Beiping Yan ◽  
Hei-Feng Xiang ◽  
Chi-Ming Che
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Nano Composite ◽  
Composite Field ◽  
Effect Transistor

Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1293-1298 ◽  
Author(s):  
Pyo Jin Jeon ◽  
Young Tack Lee ◽  
June Yeong Lim ◽  
Jin Sung Kim ◽  
Do Kyung Hwang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Black Phosphorus ◽  
Effect Transistor

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

Understanding charge trapping/detrapping at the zinc oxide (ZnO)/MAPbI3 perovskite interface in the dark and under illumination using a ZnO/perovskite/ZnO test platform

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20377-20383 ◽  
Author(s):  
Youngjun Kim ◽  
Byoungnam Park
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Lead Iodide ◽  
Test Platform ◽  
Interfacial Contact ◽  
Effect Transistor ◽  
Methylammonium Lead Iodide

We fabricated a zinc oxide (ZnO)/methylammonium lead iodide (MAPbI3) perovskite/ZnO field effect transistor (FET) test platform device through which ZnO/perovskite interfacial contact properties can be probed in the dark and under illumination.

scholarly journals Investigation of Organic Field-Effect Transistor (OFET) based NO2 Sensing Response using Low-Cost Green Synthesized Zinc Oxide Nanoparticles

2020 ◽  
Vol 33 (1) ◽  
pp. 31-36
Author(s):  
G. Balanagireddy ◽  
Ashwath Narayana ◽  
M. Roopa
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Average Particle Size ◽  
Microwave Assisted Synthesis ◽  
Average Particle ◽  
Nanostructured Particles ◽  
Effect Transistor

A low-cost and green-synthesized zinc oxide nanostructured particles are extensively studied owing to their remarkable and ample characteristics with less toxicity and eco-friendly approach. The present work comprehends the green synthesis of ZnO nanostructured particles using bougainvillea leaf extract-arbitrated microwave-assisted synthesis and their use in field effect transistor for nitrogen dioxide sensing at room temperature. The as-synthesized nanoparticles were characterized using analytical techniques; XRD determined the pure crystallite structure with no impurities, SEM confirmed the spherical shape of nanoparticles with ~20 nm (average particle size) and the atomic weight percentage were analyzed using EDAX, notable photophysical properties were revealed from absorption and emission spectra performed using UV-visible spectroscopy. Poly(3-hexylthiophene) and ZnO nanoparticles were employed in the field effect transistor (p-type) for NO2 sensing at room temperature with the mobility (field-effect) of ~10-4 cm2 V-1 s-1. The sensitivity of the fabricated OFET device was extracted from the transistor characteristics (at Vgs = -30 V and Vds = -40 V) found to be ~4.8 × 10-3 nA/ppm. The device exhibited engrossing characteristics such as excellent recoverability (> 95%), with ultrafast response time (< 30 s) and greater sensitivity with high stability as can be assessed from the electrical characteristics.

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