Optical bistable switching in Fabry-Perot interferometer with bulk heavily doped GaAs active layer

2006 ◽  
Author(s):  
George V. Sinitsyn ◽  
Ilya A. Utkin
Keyword(s):  
Active Layer ◽  
Bistable Switching ◽  
Fabry Perot ◽  
Heavily Doped

Optical bistable switching in pyran dye-doped polymers

2014 ◽  
Vol 23 (02) ◽  
pp. 1450018 ◽  
Author(s):  
Purnima ◽  
Devendra Mohan
Keyword(s):  
Solid State ◽  
Communication Systems ◽  
Optical Bistability ◽  
Nonlinear Refraction ◽  
Nonlinear Behavior ◽  
Single Mode ◽  
Third Order ◽  
Bistable Switching ◽  
Fabry Perot ◽  
Doped Polymers

In the present frame of work, optical bistability using a Fabry–Perot (FP) cavity containing 4-dicyanomethylene-2-methyl-6-p-dimethylaminostyryl-4H-pyran (DCM) dye entrapped in poly-methylmethacrylate (PMMA) matrix is experimentally investigated. Optical nonlinear behavior of solid-state samples is studied using a single-mode Q-switched nanosecond Nd:YAG laser operating at 532 nm. Various optical nonlinear parameters such as nonlinear refractive index (n2) and third-order susceptibility (χ3) of the material are numerically estimated from bistability loops. The origin of optically bistable behavior is attributed to photoisomerization-assisted nonlinear refraction phenomenon. It is observed that nonlinear refraction dominates over nonlinear absorption in giving rise to the optical bistability. The study shows that DCM dye entrapped in solid-state matrices are promising candidate for polymer-based optical switches, data processing, and communication systems.

A Fabry–Perot interferometer formed in the core of a composite optical fibre heavily doped with phosphorus oxide

2019 ◽  
Vol 49 (12) ◽  
pp. 1140-1144
Author(s):  
O N Egorova ◽  
S A Vasil'ev ◽  
I G Likhachev ◽  
S E Sverchkov ◽  
B I Galagan ◽  
...  
Keyword(s):  
Optical Fibre ◽  
Phosphorus Oxide ◽  
The Core ◽  
Fabry Perot ◽  
Heavily Doped

Fabry Perot laser properties with high pump lasers for upgrading fiber optic transceiver systems

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Mahmoud M. A. Eid ◽  
Ahmed Nabih Zaki Rashed ◽  
Araf Shafkat ◽  
Kawsar Ahmed
Keyword(s):  
Light Source ◽  
Active Layer ◽  
Fiber Optic ◽  
Signal Amplitude ◽  
Physical Parameters ◽  
Layer Width ◽  
Time Domain Signal ◽  
Fabry Perot ◽  
High Pump ◽  
Pump Lasers

AbstractThe work has outlined the Fabry Perot laser properties with high pump lasers for upgrading fiber optic transceiver systems. The physical structures of the light source are taken into account such as active layer length and active layer width. High pump laser is used for providing strength to the signal through the transmission/reception stages. Peak and minimum signal power levels are measured in the spectral frequency domain and time domain. Signal amplitude level margin is also measured with the optimum physical parameters of the light source. The optimum operation system performance efficiency is achieved with an active layer length of 0.06 cm, and active layer width suitable is 1.5 × 10−4 cm.

All‐optical bistable switching and signal regeneration in a semiconductor layered distributed‐feedback/Fabry–Perot structure

1993 ◽  
Vol 63 (7) ◽  
pp. 866-868 ◽  
Author(s):  
J. He ◽  
M. Cada ◽  
M.‐A. Dupertuis ◽  
D. Martin ◽  
F. Morier‐Genoud ◽  
...  
Keyword(s):  
Distributed Feedback ◽  
Signal Regeneration ◽  
Bistable Switching ◽  
Fabry Perot ◽  
All Optical

Highly Stable Sub-Picosecond Pulse Generation at 41GHz in a Two-Gain-section Bulk Active Layer Fabry-Perot Laser

2006 ◽  
Author(s):  
F. van Dijk ◽  
C. Gosset ◽  
J. Renaudier ◽  
F. Lelarge ◽  
R. Benot ◽  
...  
Keyword(s):  
Active Layer ◽  
Picosecond Pulse ◽  
Pulse Generation ◽  
Fabry Perot

High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

1991 ◽  
Vol 240 ◽  
Author(s):  
R. M. Kapre ◽  
Li Chen ◽  
K. Kaviani ◽  
Kezhong Hu ◽  
Ping Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Resonant Tunneling Diode ◽  
Material System ◽  
High Contrast ◽  
Tunneling Diode ◽  
Bistable Switching ◽  
Fabry Perot ◽  
Effect Transistor

We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.

Reflectivity Modelling of All-Porous-Silicon Distributed Bragg Reflectors and Fabry-Perot Microcavities

2005 ◽  
Vol 10 (1) ◽  
pp. 83-91 ◽  
Author(s):  
N. Samuolienė ◽  
E. Šatkovskis
Keyword(s):  
Porous Silicon ◽  
Wavelength Range ◽  
Active Layer ◽  
Optical Parameters ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Bragg Mirror ◽  
Number Of Layers ◽  
Fabry Perot ◽  
The Impact

Herein, the problem of nanocrystaline silicon laser and its importance in microelectronics are discussed upon. The features of vertical Fabry-Perot microcavities made on the base of porous silicon are described. The responses of the reflectivity of the distributed reflection Bragg mirrors and Fabry-Perot microcavities were found using transfer matrixes method for this purpose. Inherent optical parameters of porous silicon, deposited by electrochemical etch, were used in the calculations. The calculation of the reflectivity of the distributed reflection Bragg mirrors with front active layer of nanostructural porous silicon had been examined. In the second part, the features of Fabry-Perot microcavities on variation of the number of layers of the front or rear mirrors are described. The impact of the thickness of the active nanocrystaline silicon spacer between two distributed reflection Bragg mirrors upon the spectra of optical reflectivity of Fabry-Perot microcavities in the wavelength range of 0.4–0.9 µm had been examined as well. The made conclusions are important for improvement of the thickness of the active porous silicon spacer in front of Bragg mirror and the features of Fabry-Perot microcavities.

Optical properties of a Fabry–Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer

2000 ◽  
Vol 77 (19) ◽  
pp. 3009-3011 ◽  
Author(s):  
A. A. Dukin ◽  
N. A. Feoktistov ◽  
V. G. Golubev ◽  
A. V. Medvedev ◽  
A. B. Pevtsov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Amorphous Silicon ◽  
Active Layer ◽  
Hydrogenated Amorphous Silicon ◽  
Fabry Perot ◽  
Er Doped ◽  
Hydrogenated Amorphous

Subnanosecond Switching and Recovery in a Fabry-Perot Etalon Based on Bulk Heavily Doped n-GaAs

1993 ◽  
pp. 249-254
Author(s):  
D. J. Goodwill ◽  
F. V. Karpushko ◽  
S. D. Smith ◽  
A. C. Walker
Keyword(s):  
Fabry Perot ◽  
Heavily Doped
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