Optical properties of light-emitting porous silicon

2006 ◽  
Author(s):  
Fengcheng Teng ◽  
Shuxin Qiao ◽  
Yanan Cai ◽  
Zhiquan Li
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Light Emitting

Porous Silicon: Microstructure, Optical Properties and Application to Light Emitting Diodes

1994 ◽  
pp. 363-392 ◽  
Author(s):  
Yoshihiko Kanemitsu ◽  
Takahiro Matsumoto ◽  
Toshiro Futagi ◽  
Hidenori Mimura
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Light Emitting Diodes ◽  
Light Emitting

Nonlinear Electrical Functions of Porous Silicon Light-Emitting Diodes

1996 ◽  
Vol 452 ◽  
Author(s):  
K. Ueno ◽  
T. Ozaki ◽  
H. Koyama ◽  
N. Koshida
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Negative Resistance ◽  
Back Contact ◽  
Electrical Characteristics ◽  
Electrical Behavior ◽  
Si Substrate ◽  
Metal Insulator ◽  
Light Emitting ◽  
Au Film

AbstractSome nonlinear electrical characteristics in electroluminescent porous silicon (PS) diodes with a relatively thin PS layer (0.5–5 μm thick) are described. The experimental PS diodes were composed of a semitransparent Au film, a PS layer, p- or n-type Si substrate, and an ohmic back contact. The PS layers were prepared by anodizing Si wafers in an ethanoic HF solution. In some cases, the PS layers were treated by rapid thermal oxidization (RTO) process. When the bias voltage is applied, the PS diodes show the electrical behavior like the metal-insulator-semiconductor (MIS) diodes. The negative-resistance characteristics and memory effect are also observed. These results indicate that the quantum-structured nature of the PS layer appears not only in the optical properties but also in the electrical properties.

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum

1997 ◽  
Vol 31 (7) ◽  
pp. 704-706 ◽  
Author(s):  
V. A. Kiselev ◽  
S. V. Polisadin ◽  
A. V. Postnikov
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Thermal Annealing

Non-linear optical properties of poly(phenylene vinylene) in porous silicon substrates

2005 ◽  
Vol 2 (9) ◽  
pp. 3222-3226 ◽  
Author(s):  
T. P. Nguyen ◽  
P. Le Rendu ◽  
C. Simos ◽  
P. X. Nguyen ◽  
V. Skarka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Phenylene Vinylene ◽  
Silicon Substrates ◽  
Non Linear ◽  
Linear Optical Properties ◽  
Linear Optical

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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