Improved breakdown model for estimating dark count rate in avalanche photodiodes with InP and InAlAs multiplication layers

2006 ◽  
Author(s):  
Andrew S. Huntington ◽  
Madison A. Compton ◽  
George M. Williams
Keyword(s):  
Count Rate ◽  
Avalanche Photodiodes ◽  
Dark Count ◽  
Dark Count Rate ◽  
Breakdown Model

Scaling of dark count rate with active area in 1.06μm photon-counting InGaAsP∕InP avalanche photodiodes

2006 ◽  
Vol 89 (11) ◽  
pp. 111102 ◽  
Author(s):  
E. A. Dauler ◽  
P. I. Hopman ◽  
K. A. McIntosh ◽  
J. P. Donnelly ◽  
E. K. Duerr ◽  
...  
Keyword(s):  
Count Rate ◽  
Avalanche Photodiodes ◽  
Photon Counting ◽  
Active Area ◽  
Dark Count ◽  
Dark Count Rate

Low dark count rate 4H-SiC Geiger mode avalanche photodiodes operated under gated quenching at 325nm

2006 ◽  
Author(s):  
Ariane L. Beck ◽  
Xiangyi Guo ◽  
Han-Din Liu ◽  
Aruna Ghatak-roy ◽  
Joe C. Campbell
Keyword(s):  
Count Rate ◽  
Avalanche Photodiodes ◽  
Dark Count ◽  
Dark Count Rate ◽  
Geiger Mode

Design, Fabrication, and Verification of Blue-Extended Single-Photon Avalanche Diode with Low Dark Count Rate and High Photon Detection Efficiency

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo
Keyword(s):  
Bias Voltage ◽  
Spectral Range ◽  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Dark Count ◽  
Photon Detection ◽  
Avalanche Diode ◽  
Dark Count Rate ◽  
Photon Detection Efficiency

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.

A low dark count rate single photon avalanche diode with standard 180 nm CMOS technology

2019 ◽  
Vol 33 (09) ◽  
pp. 1950099
Author(s):  
Wei Wang ◽  
Guang Wang ◽  
Hongan Zeng ◽  
Yuanyao Zhao ◽  
U-Fat Chio ◽  
...  
Keyword(s):  
Count Rate ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Technology ◽  
Uniform Electric Field ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Dark Count ◽  
Avalanche Diode ◽  
Dark Count Rate

A single photon avalanche diode (SPAD) structure designed with standard 180 nm CMOS technology is investigated in detail. The SPAD employs a [Formula: see text]-well anode, rather than the conventional [Formula: see text] layer, and with a [Formula: see text]-well/deep [Formula: see text]-well junction with square shape, a deep retrograde [Formula: see text]-well virtual guard ring which prevents the premature edge avalanche breakdown. The analytical and simulation results show that the SPAD exhibits a uniform electric field distribution in [Formula: see text]-well/deep [Formula: see text]-well junction with the active area of [Formula: see text], and the avalanche breakdown voltage is as low as 9 V, the peak of the photon detection efficiency (PDE) is about 33% at 500 nm, the relatively low dark count rate (DCR) of 0.66 KHz at room temperature is obtained.

Dark Count Rate Modeling in Single-Photon Avalanche Diodes for Space LIDAR Applications

2019 ◽  
Author(s):  
Aymeric Panglosse ◽  
Philippe Martin-Gonthier ◽  
Olivier Marcelot ◽  
Cedric Virmontois ◽  
Olivier Saint-Pe ◽  
...  
Keyword(s):  
Count Rate ◽  
Single Photon ◽  
Dark Count ◽  
Dark Count Rate ◽  
Avalanche Diodes ◽  
Single Photon Avalanche Diodes
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