THz quantum semiconductor devices

2006 ◽  
Author(s):  
H.C. Liu ◽  
H. Luo ◽  
D. Ban ◽  
M. Wächter ◽  
C. Y. Song ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Quantum Semiconductor

scholarly journals The Chapman-Enskog Expansion and the Quantum Hydrodynamic Model for Semiconductor Devices

VLSI Design ◽  
2000 ◽  
Vol 10 (4) ◽  
pp. 415-435 ◽  
Author(s):  
Carl L. Gardner ◽  
Christian Ringhofer
Keyword(s):  
Heat Flux ◽  
Boltzmann Equation ◽  
Potential Energy ◽  
Hydrodynamic Model ◽  
Semiconductor Devices ◽  
Quantum Hydrodynamic Model ◽  
Qhd Model ◽  
Quantum Hydrodynamic ◽  
Classical Potential ◽  
Quantum Semiconductor

A “smooth” quantum hydrodynamic (QHD) model for semiconductor devices is derived by a Chapman-Enskog expansion of the Wigner-Boltzmann equation which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A dispersive quantum contribution to the heat flux term in the QHD model is introduced.

Multicomponent Model of Charge Transport in Quantum Semiconductor Devices

2021 ◽  
Vol 23 (1) ◽  
pp. 24-31
Author(s):  
I.A. Obukhov ◽  
Keyword(s):  
Charge Transport ◽  
Diffusion Model ◽  
Semiconductor Devices ◽  
Optoelectronic Devices ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Classical Approximation ◽  
Quasi Classical Approximation ◽  
Quantum Semiconductor ◽  
Multicomponent Model

A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diodes, electronic, thermionic and optoelectronic devices based on nanowires. In a quasi-classical approximation it goes into a drift-diffusion model.

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

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