Analysis of the electric field on the refractive-index change of an optical waveguide

2006 ◽  
Author(s):  
Ignacio Z. Huerta ◽  
Mario G. Ramirez ◽  
Volodimir Grimalsky
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Optical Waveguide ◽  
Refractive Index Change ◽  
Index Change

Electric-Field-Induced Refractive Index Change In Gainasp/Inp Mqw Structures

1988 ◽  
Author(s):  
Kazuhiko Shimomura ◽  
K. G. Ravikumar ◽  
Tomoyuki Kikugawa ◽  
Shigehisa Arai ◽  
Yasuharu Suematsu
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Refractive Index Change ◽  
Index Change

Nonlinear refractive index change and optical rectification in a GaN-based step quantum wells with strong built-in electric field

2015 ◽  
Vol 29 (05) ◽  
pp. 1550024 ◽  
Author(s):  
Li Zhang
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Quantum Wells ◽  
Nonlinear Refractive Index ◽  
Structural Parameters ◽  
Refractive Index Change ◽  
Blue Shift ◽  
Optical Rectification ◽  
Airy Functions ◽  
Index Change

Based on the compact density matrix approach, the linear and nonlinear refractive index change (RIC) and optical rectification (OR) coefficients in a GaN -based step QW with strong built-in electric field (BEF) have been theoretically deduced and investigated in detail. The analytical electronic state is derived by the two airy functions. And the band nonparabolicity is taken into account by using an energy dependence effective mass (EDEM) method. Numerical calculations on a four-layer AlN / GaN / Al x Ga 1-x N / AlN step QW are performed, and the curves for the geometric factors, the linear, the nonlinear, the total RICs and the OR coefficients as functions of the structural parameters of the step QW are discussed. The features for these curves were specified and reasons for the features were explained reasonably. It is found that the decreasing of well width Lw, and step barrier width Lb and the doped concentration x in step barrier will result in the significant enhancement of the RICs. With the decrease of Lw, Lb and x, the resonant photon energies of RIC and OR coefficients have obvious blue-shift. Moreover, the RIC and OR coefficients behave different dependence on the structural parameters of the GaN -based step QWs. The profound physical reasons are also analyzed.

scholarly journals Thin-Film Lithium Niobate Based Acousto-Optic Modulation Working at Higher-Order TE1 Mode

Photonics ◽  
2021 ◽  
Vol 9 (1) ◽  
pp. 12
Author(s):  
Yang Yang ◽  
Yin Xu ◽  
Dongmei Huang ◽  
Feng Li ◽  
Yue Dong ◽  
...  
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Lithium Niobate ◽  
Optical Waveguide ◽  
Mode Conversion ◽  
Refractive Index Change ◽  
Acoustic Resonator ◽  
Higher Order ◽  
Index Change ◽  
On Chip

Acousto-optic modulation (AOM) is regarded as an effective way to link multi-physical fields on-chip. We propose an on-chip AOM scheme based on the thin-film lithium niobate (TFLN) platform working at the higher-order TE1 mode, rather than the commonly used fundamental TE0 mode. Multi-physical field coupling analyses were carried out to obtain the refractive index change of the optical waveguide (>6.5×10−10 for a single phonon) induced by the enhanced acousto-optic interaction between the acoustic resonator mode and the multimode optical waveguide. By using a Mach-Zehnder interferometer (MZI) structure, the refractive index change is utilized to modulate the output spectrum of the MZI, thus achieving the AOM function. In the proposed AOM scheme, efficient mode conversion between the TE0 and TE1 mode is required in order to ensure that the AOM works at the higher-order TE1 mode in the MZI structure. Our results show that the half-wave-voltage-length product (VπL) is <0.01 V·cm, which is lower than that in some previous reports on AOM and electro-optic modulation (EOM) working at the fundamental TE0 mode (e.g., VπL > 0.04 V·cm for AOM, VπL > 1 V·cm for EOM). Finally, the proposed AOM has lower loss when compared with EOM because the electrode of the AOM can be placed far from the optical waveguide.

scholarly journals Electric-Field Induced Shift in the Plasmon Resonance Due to the Interfacial Pockels Effect of Water on a Silver Surface

2021 ◽  
Vol 11 (5) ◽  
pp. 2152
Author(s):  
Yurina Nishi ◽  
Ryosuke Watanabe ◽  
Subaru Sasaki ◽  
Akihiro Okada ◽  
Keisuke Seto ◽  
...  
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Refractive Index Change ◽  
Optical Modulator ◽  
Interfacial Water ◽  
Pockels Effect ◽  
Silver Surface ◽  
Index Change ◽  
Effect Of Water ◽  
Oxide Electrodes

In the research on application of an optical modulator used for information communication, materials having a large Pockels effect, a refractive index change proportional to the electric-field, are required. It is known that the interfacial water on the surface of transparent oxide electrodes has a giant Pockels coefficient, which is an order of magnitude larger than the solid Pockels crystals practically used. It is important to know the Pockels coefficient of water on not only an oxide surface, but also a metal surface to understand the mechanism of the interfacial Pockels effect of water. However, a method has not yet been established for evaluating the coefficient of water–metal interface. Here we present an evaluation method of the Pockels coefficient of interfacial water on a metal (silver) surface from the spectral shift of the surface plasmon polariton resonance due to electric-field induced refractive index change of the interfacial water. The Pockels coefficient of interfacial water on Ag was evaluated as |r33|=5±1 pm/V, without need for exact knowledge of the thickness of the interfacial layer (electric double layer of water) as long as the penetration depth of the plasmon is larger than the thickness.

Analysis of the refractive index change of optical waveguide in LiNbO3using a femtosecond laser

2014 ◽  
Author(s):  
Shi-han Yang ◽  
Liang Zhang ◽  
Xue-song Lin ◽  
Jie Feng ◽  
Zi-gang Zhou ◽  
...  
Keyword(s):  
Refractive Index ◽  
Femtosecond Laser ◽  
Optical Waveguide ◽  
Refractive Index Change ◽  
Index Change
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