A high aspect ratio Si-fin FinFET fabricated with 193nm scanner photolithography and thermal oxide hard mask etching techniques

2006 ◽  
Author(s):  
Wen-Shiang Liao
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Hard Mask ◽  
Thermal Oxide ◽  
Mask Etching

High aspect ratio contact hole etching using relatively transparent amorphous carbon hard mask deposited from propylene

2010 ◽  
Vol 518 (21) ◽  
pp. 6076-6079 ◽  
Author(s):  
Ching-Yuan Ho ◽  
X.J. Lin ◽  
H.R. Chien ◽  
Chenhsin Lien
Keyword(s):  
Aspect Ratio ◽  
Amorphous Carbon ◽  
High Aspect Ratio ◽  
Hard Mask

A Two-Step Spacer Etch for High-Aspect-Ratio Gate Stack Process

2000 ◽  
Vol 611 ◽  
Author(s):  
Chien Yu ◽  
Rich Wise ◽  
Anthony Domenicucci
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Gate Stack ◽  
Methyl Fluoride ◽  
Thermal Oxide ◽  
Profile Control ◽  
The Stability ◽  
Better Than

ABSTRACTA highly selective nitride etch was developed for gate stack spacer process in advanced memory programs. Based on methyl fluoride chemistry with better than 8:1 selectivity of nitride:oxide, this process exhibits minimal erosion to the underlying RTO thermal oxide for consistent diffusion ion-implant control. As the groundrule changed to 0.175um and below, a two-step etch scheme was employed to maintain the profile control in high-aspect-ratio structures. The stability and repeatability of the process is demonstrated in the SPC chart of the post etch FTA site measurement.

High aspect ratio germanium nanowires obtained by dry etching

MRS Advances ◽  
2016 ◽  
Vol 1 (13) ◽  
pp. 875-880 ◽  
Author(s):  
Kevin Guilloy ◽  
Nicolas Pauc ◽  
Alban Gassenq ◽  
Vincent Calvo
Keyword(s):  
Aspect Ratio ◽  
Mass Flow ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Gas Pressure ◽  
Ion Etching ◽  
Germanium Nanowires ◽  
Hard Mask ◽  
20 Nm

ABSTRACTWe present here a reactive ion etching recipe to fabricate germanium nanowires. We used a combination of Cl2, N2 and O2 and studied the influence of both the gas pressure and the O2 mass flow on the morphology of the nanowires. 5 µm long nanowires with an aspect ratio of 20 are demonstrated with smooth surfaces and a tapering below 20 nm/µm. We also show that both gold and aluminum can be used as hard mask; the latter achieving a selectivity with germanium above 100.

APF hard mask distortion improvement for high aspect ratio patterning

2015 ◽  
Author(s):  
Bing-Lung Yu ◽  
YuKai Huang ◽  
Shing-Ann Luo ◽  
Yi-Sheng Cheng ◽  
Yung-Tai Hung ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Hard Mask

High aspect ratio nano-fabrication of photonic crystal structures on glass wafers using chrome as hard mask

2014 ◽  
Vol 25 (35) ◽  
pp. 355301 ◽  
Author(s):  
Md Nazmul Hossain ◽  
John Justice ◽  
Pierre Lovera ◽  
Brendan McCarthy ◽  
Alan O’Riordan ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Aspect Ratio ◽  
Crystal Structures ◽  
High Aspect Ratio ◽  
Hard Mask ◽  
Nano Fabrication
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