Super-resolution optical inspection for semiconductor defects using standing wave shift

Author(s):  
S. Usuki ◽  
H. Nishioka ◽  
S. Takahashi ◽  
K. Takamasu
Author(s):  
Yizhao Guan ◽  
Hiromasa Kume ◽  
Shotaro Kadoya ◽  
Masaki Michihata ◽  
Satoru Takahashi

Abstract Microstructures are widely used in the manufacture of functional surfaces. An optical-based super-resolution, non-invasive method is preferred for the inspection of surfaces with massive microstructures. The Structured Illumination Microscopy (SIM) uses standing-wave illumination to reach optical super-resolution. Recently, coherent SIM is being studied. It can obtain not only the super-resolved intensity distribution but also the phase and amplitude distribution of the sample surface beyond the diffraction limit. By analysis of the phase-depth dependency, the depth measurement for microgroove structures with coherent SIM is expected. FDTD analysis is applied for observing the near-field response of microgroove under the standing-wave illumination. The near-field phase shows depth dependency in this analysis. Moreover, the effects from microgroove width, the incident angle, and the relative position between the standing-wave peak and center of the microgroove are investigated. It is found the near-field phase change can measure depth until 200 nm (aspect ratio 1) with an error of up to 20.4 nm in the case that the microgroove width is smaller than half of the wavelength.


Author(s):  
Yizhao Guan ◽  
Hiromasa Kume ◽  
Shotaro Kadoya ◽  
Masaki Michihata ◽  
Satoru Takahashi

Abstract Microstructures are widely used in the manufacture of functional surfaces. An optical-based super-resolution, non-invasive method is preferred for the inspection of surfaces with massive microstructures. The Structured Illumination Microscopy (SIM) uses standing-wave illumination to reach optical super-resolution. Recently, coherent SIM is being studied. It can obtain not only the super-resolved intensity distribution but also the phase and amplitude distribution of the sample surface beyond the diffraction limit. By analysis of the phase-depth dependency, the depth measurement for microgroove structures with coherent SIM is expected. FDTD analysis is applied for observing the near-field response of microgroove under the standing-wave illumination. The near-field phase shows depth dependency in this analysis. Moreover, the effects from microgroove width, the incident angle, and the relative position between the standing-wave peak and center of the microgroove are investigated. It is found the near-field phase change can measure depth until 200 nm (aspect ratio 1) with an error of up to 20.4 nm in the case that the microgroove width is smaller than half of the wavelength.


2011 ◽  
Vol 5 (2) ◽  
pp. 167-172
Author(s):  
Ryota Kudo ◽  
◽  
Shin Usuki ◽  
Satoru Takahashi ◽  
Kiyoshi Takamasu ◽  
...  

Microfabricated structures such as semiconductors and MEMS continue shrinking as nanotechnology expands, demand that measures microfabricated structures has risen. Optics and electron beam have been mainly used for that purpose, but the resolving power of optics is limited by the Rayleigh limit and it is generally low for subwavelength-geometry defects, while scanning electron microscopy requires a vacuum and induces contamination in measurement. To handle these considerations, we propose optical microfabrication inspection using a standing-wave shift. This is based on a super-resolution algorithm in which the inspection resolution exceeds the Rayleigh limit by shifting standing waves with a piezoelectric actuator. While resolution beyond the Rayleigh limit by proposed method has been studied theoretically and realized experimentally, we must understand the influence of experimental error factors and reflect this influence in the calibration when actual application is constructed. The standing-wave pitch, initial phase, and noise were studied as experimental error factors. As a result, it was confirmed that super-resolution beyond the Rayleigh limit is achievable if (i) standingwave pitch error was 5% when standing-wave pitch was 300 nm or less and (ii) if initial phase error was 30° when standing-wave pitch was 300 nm. Noise accumulation was confirmed in studies of the noise effect, and a low-pass filter proved effective against noise influence.


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