Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment

2011 ◽  
Vol 109 (8) ◽  
pp. 083501 ◽  
Author(s):  
X. L. Zhou ◽  
Y. H. Chen ◽  
H. Y. Zhang ◽  
G. Y. Zhou ◽  
T. F. Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Temperature Dependent ◽  
Simulation And Experiment ◽  
Carrier Tunneling ◽  
Gaas Quantum Dot ◽  
Temperature Dependent Photoluminescence

Electronic characteristics of doped InAs/GaAs quantum dot photodetector: temperature dependent dark current and noise density

2006 ◽  
Author(s):  
Chung-Chi Liao ◽  
Shiang-Feng Tang ◽  
Tzu-Chiang Chen ◽  
Cheng-Der Chiang ◽  
San-Te Yang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Temperature Dependent ◽  
Noise Density ◽  
Gaas Quantum Dot

Time-Integrated Photoluminescence Studies of In0.3Ga0.7As/GaAs Quantum Dot Molecules

2006 ◽  
Vol 935 ◽  
Author(s):  
William Kerr ◽  
Valeria Gabriela Stoleru ◽  
Anup Pancholi
Keyword(s):  
Quantum Dot ◽  
Electronic Properties ◽  
Temperature Dependent ◽  
Quantum Dot Molecules ◽  
Gaas Barrier ◽  
Optical And Electronic Properties ◽  
Gaas Quantum Dot ◽  
Photoluminescence Studies ◽  
Stacked Quantum Dots ◽  
Good Agreement

ABSTRACTWe investigate experimentally and theoretically optical and electronic properties of In0.3Ga0.7As/GaAs quantum dot molecules (QDMs) formed by two layers of self-assembled, vertically stacked quantum dots (QDs). Structures with In0.3Ga0.7As/GaAs QD layers separated by a thin GaAs barrier were grown by solid source molecular beam epitaxy, and were characterized by time-integrated photoluminescence (PL). For the temperature-dependent PL measurements a He-flow optical cryostat was used to control the temperature between 4 and 300 K. The experimentally observed behavior is in good agreement with that expected from our eight-band k·p calculations. Optical and electronic properties of these QDMs are further compared with those of dots grown under conditions that did not promote vertical organization.

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