Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

Author(s):  
J. Lloyd-Hughes ◽  
E. Castro-Camus ◽  
M. D. Fraser ◽  
H. H. Tan ◽  
C. Jagadish ◽  
...  
2004 ◽  
Vol 70 (23) ◽  
Author(s):  
J. Lloyd-Hughes ◽  
E. Castro-Camus ◽  
M. Fraser ◽  
C. Jagadish ◽  
M. Johnston

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 411
Author(s):  
Chul Kang ◽  
Gyuseok Lee ◽  
Woo-Jung Lee ◽  
Dae-Hyung Cho ◽  
Inhee Maeng ◽  
...  

We investigated THz emission from Ar-ion-implanted Cu(In,Ga)Se2 (CIGS) films. THz radiation from the CIGS films increases as the density of implanted Ar ions increases. This is because Ar ions contribute to an increase in the surface surge current density. The effect of Ar-ion implantation on the carrier dynamics of CIGS films was also investigated using optical pump THz probe spectroscopy. The fitted results imply that implanted Ar ions increase the charge transition of intra-and carrier–carrier scattering lifetimes and decrease the bandgap transition lifetime.


2006 ◽  
Vol 88 (16) ◽  
pp. 161109 ◽  
Author(s):  
Yulei Shi ◽  
Yuping Yang ◽  
Xinlong Xu ◽  
Shihua Ma ◽  
Wei Yan ◽  
...  

2012 ◽  
Vol 85 (3) ◽  
Author(s):  
S. Boubanga-Tombet ◽  
S. Chan ◽  
T. Watanabe ◽  
A. Satou ◽  
V. Ryzhii ◽  
...  

Author(s):  
J. Lloyd-Hughes ◽  
E. Castro-Camus ◽  
M. D. Fraser ◽  
H. H. Tan ◽  
C. Jagadish ◽  
...  

2004 ◽  
Vol 43 (1) ◽  
pp. 184-185 ◽  
Author(s):  
Yasutaka Fujii ◽  
Kohei Horiuchi ◽  
Fumihiko Kannari ◽  
Muneaki Hase ◽  
Masahiro Kitajima

2001 ◽  
Vol 90 (3) ◽  
pp. 1303-1306 ◽  
Author(s):  
H. Němec ◽  
A. Pashkin ◽  
P. Kužel ◽  
M. Khazan ◽  
S. Schnüll ◽  
...  

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