Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy

2001 ◽  
Vol 90 (3) ◽  
pp. 1303-1306 ◽  
Author(s):  
H. Němec ◽  
A. Pashkin ◽  
P. Kužel ◽  
M. Khazan ◽  
S. Schnüll ◽  
...  
Keyword(s):  
Low Temperature ◽  
Emission Spectroscopy ◽  
Carrier Dynamics ◽  
Terahertz Emission ◽  
Terahertz Emission Spectroscopy ◽  
Low Temperature Grown Gaas

Ultrafast carrier dynamics in Au∕GaAs interfaces studied by terahertz emission spectroscopy

2006 ◽  
Vol 88 (16) ◽  
pp. 161109 ◽  
Author(s):  
Yulei Shi ◽  
Yuping Yang ◽  
Xinlong Xu ◽  
Shihua Ma ◽  
Wei Yan ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Carrier Dynamics ◽  
Terahertz Emission ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Terahertz Emission Spectroscopy

Studies of interface polarization and magnetization dynamics using terahertz emission spectroscopy

2005 ◽  
Author(s):  
Shayne M. Harrel ◽  
James M. Schleicher ◽  
Eric Beaurepaire ◽  
Jean-Yves Bigot ◽  
Charles A. Schmuttenmaer
Keyword(s):  
Emission Spectroscopy ◽  
Magnetization Dynamics ◽  
Terahertz Emission ◽  
Interface Polarization ◽  
Terahertz Emission Spectroscopy

Helicity-dependent photocurrent in a Bi2Se3 thin film probed by terahertz emission spectroscopy

2016 ◽  
Vol 94 (16) ◽  
Author(s):  
Sun Young Hamh ◽  
Soon-Hee Park ◽  
Sahng-Kyoon Jerng ◽  
Jae Ho Jeon ◽  
Seung-Hyun Chun ◽  
...  
Keyword(s):  
Thin Film ◽  
Emission Spectroscopy ◽  
Terahertz Emission ◽  
Terahertz Emission Spectroscopy

scholarly journals Determination of the time origin by 
the maximum entropy method in 
time-domain terahertz emission spectroscopy

2010 ◽  
Vol 18 (15) ◽  
pp. 15853 ◽  
Author(s):  
Takeya Unuma ◽  
Yusuke Ino ◽  
Makoto Kuwata-Gonokami ◽  
Erik M. Vartiainen ◽  
Kai-Erik Peiponen ◽  
...  
Keyword(s):  
Maximum Entropy ◽  
Time Domain ◽  
Emission Spectroscopy ◽  
Maximum Entropy Method ◽  
Entropy Method ◽  
Terahertz Emission ◽  
Terahertz Emission Spectroscopy ◽  
Time Origin

Characterization of Magnetization Dynamics using Terahertz Emission Spectroscopy

2007 ◽  
pp. 793-795
Author(s):  
James M. Schleicher ◽  
Shayne M. Harrel ◽  
Charles A. Schmuttenmaer ◽  
Eric Beaurepaire ◽  
Jean-Yves Bigot
Keyword(s):  
Emission Spectroscopy ◽  
Magnetization Dynamics ◽  
Terahertz Emission ◽  
Terahertz Emission Spectroscopy

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

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