Growth of bismuth silicon oxide and bismuth germanium oxide crystals by Czochralski technique

1992 ◽  
Author(s):  
R. Gopalakrishnan ◽  
D. Krishnamurthy ◽  
Dakshanamoorthy Arivuoli ◽  
P. Ramasamy
1996 ◽  
Vol 166 (1-4) ◽  
pp. 325-328 ◽  
Author(s):  
J. Martínez-López ◽  
M. González-Mañas ◽  
M.A. Caballero ◽  
E. Diéguez ◽  
B. Capelle

1999 ◽  
Vol 64 (9) ◽  
pp. 553-561 ◽  
Author(s):  
Aleksandar Golubovic ◽  
Slobodanka Nikolic ◽  
Rados Gajic ◽  
Stevan Djuric ◽  
Andreja Valcic

Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples to obtain the lattice parameters. The optical properties of the bismuth silicon oxide single crystals were investigated. The obtained results are discussed and compared with published data.


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