Ultrawideband wide-open RF spectrum analysis using spectral hole burning

2005 ◽  
Author(s):  
Max Colice ◽  
Friso Schlottau ◽  
Kelvin Wagner
Keyword(s):  
Spectrum Analysis ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
Rf Spectrum

RF spectrum analysis in spectral hole burning media

2004 ◽  
Author(s):  
Max Colice ◽  
Friso Schlottau ◽  
Kelvin Wagner ◽  
R. Krishna Mohan ◽  
William R. Babbitt ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole ◽  
Rf Spectrum

scholarly journals Explanation of the distorted spectrum in a spectral hole burning RF spectrum analyzer using Bloch equations

2018 ◽  
Vol 26 (6) ◽  
pp. 6674
Author(s):  
Guofang Fan ◽  
Yuan Li ◽  
Chunguang Hu ◽  
Jiasi Wei ◽  
Hongyu Li
Keyword(s):  
Spectrum Analyzer ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Bloch Equations ◽  
Spectral Hole ◽  
Rf Spectrum

Broadband RF imaging and spectrum analysis using spatial-spectral hole-burning in an inhomogeneously broadened absorber

2005 ◽  
Author(s):  
Youzhi Li ◽  
Benjamin Braker ◽  
Friso Schlottau ◽  
Donghua Gu ◽  
Max Colice ◽  
...  
Keyword(s):  
Spectrum Analysis ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Spectral Hole

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

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