Thickness effect of LaNiO3 buffer layer on microstructure and electrical properties of PZT thin films

2004 ◽  
Author(s):  
Wenjuan Du ◽  
Wei Lu ◽  
Jinrong Cheng ◽  
Zhongyan Meng
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Thickness Effect ◽  
Pzt Thin Films

Improvement of the electrical properties of PZT thin films using TiO2 buffer layer

2001 ◽  
Vol 39 (1-4) ◽  
pp. 143-150 ◽  
Author(s):  
Kwangbae Lee ◽  
Byung Roh Rhee ◽  
Chanku Lee
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Pzt Thin Films ◽  
Tio2 Buffer Layer

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties

Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

2001 ◽  
Vol 79 (3) ◽  
pp. 403-405 ◽  
Author(s):  
E. Rokuta ◽  
Y. Hotta ◽  
T. Kubota ◽  
H. Tabata ◽  
H. Kobayashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Silicon Oxynitride

Enhancement of the Electrical Properties of GZO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer

2007 ◽  
Vol 51 (5) ◽  
pp. 1732-1735 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Se-Hyun Kim ◽  
Dae-Young Moon ◽  
Woong-Sun Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Tio2 Buffer Layer

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

Microstructure and Electrical Properties of R.F. Magnetron Sputtering Derived PZT Thin Films Deposited on PbO Buffer Layer

2005 ◽  
Vol 486-487 ◽  
pp. 626-629 ◽  
Author(s):  
Chul Ho Park ◽  
Young Gook Son
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Memory Window ◽  
Processing Temperature ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Maximum Value ◽  
Pzt Thin Film ◽  
Mfis Structure

The MFS and MFIS structures were prepared on the Si and PbO/Si substrate by the r.f. magnetron sputtering method. When the PbO buffer layer was inserted between the PZT thin film and Si substrate, the crystallization of the PZT thin films was considerably improved, and the processing temperature was lowered. Compared with the MFS structure, memory window values of the MFIS structure with the buffer layer were considerably improved. In particular, in the MFIS structure, the maximum value of the memory window is 2.0 V under the applied voltage of 9V for Pt/PZT (200 nm, 400ı)/PbO (80 nm)/Si structures with the PbO buffer layer deposited at the substrate temperature of 300ı.

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