Defect characterization for thin films through thermal wave detection

1992 ◽  
Author(s):  
Zhouling Wu ◽  
Michael Reichling ◽  
Eberhard Welsch ◽  
Dieter Schaefer ◽  
Zhengxiu Fan ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Wave ◽  
Defect Characterization ◽  
Wave Detection

Defect characterization of CdTe thin films using a slow positron beam

2007 ◽  
Vol 4 (10) ◽  
pp. 3659-3663 ◽  
Author(s):  
S. Neretina ◽  
D. Grebennikov ◽  
R. A. Hughes ◽  
M. Weber ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Thin Films ◽  
Positron Beam ◽  
Defect Characterization ◽  
Slow Positron ◽  
Cdte Thin Films

scholarly journals Advancement of Heteroepitaxial III-V/Si Thin Films through Defect Characterization

2016 ◽  
Vol 22 (S3) ◽  
pp. 1538-1539
Author(s):  
Julia I. Deitz ◽  
David W. McComb ◽  
Tyler J. Grassman
Keyword(s):  
Thin Films ◽  
Defect Characterization

High-Resolution Quadrature Photopyroelectric Spectroscopy of a-Si:H Thin Films Deposited on Silicon Wafers

1995 ◽  
Vol 49 (6) ◽  
pp. 819-824 ◽  
Author(s):  
Jun Shen ◽  
Andreas Mandelis ◽  
Andreas Othonos ◽  
Joseph Vanniasinkam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Wave ◽  
Incident Radiation ◽  
Surface Films ◽  
Si Substrates ◽  
Wafer Substrate ◽  
Ir Transmission ◽  
Ft Ir ◽  
Lock In

The recently developed photothermal technique of quadrature photopyroelectric spectroscopy (Q-PPES) has been applied to measurements of amorphous Si thin films deposited on crystalline Si substrates. Direct, meaningful comparisons have been made between purely optical transmission in-phase (IP-PPES) spectra, and purely thermal-wave sub-gap spectra with the use of a novel noncontacting PPES instrument to record lock-in in-phase and quadrature spectra, respectively. FT-IR transmission spectra have also been obtained for a comparison with this IP-PPES optical method. The results of the present work showed that the FT-IR method performs the worst in terms of spectral resolution of thin films and sub-bandgap defect/impurity absorptions inherent in the Si wafer substrate. The optical IP-PPES channel, however, albeit more sensitive than the FT-IR technique, fails to resolve spectra from surface films thinner than 2100 Å, but is sensitive to sub-bandgap absorptions. The thermal-wave Q-PPES channel is capable of resolving thin-film spectra well below 500 Å thick and exhibits strong signal levels from the crystalline Si sub-bandgap absorptions. Depending on the surface thin-film orientation toward, or away from, the direction of the incident radiation, the estimated minimum mean film thickness resolvable spectroscopically by Q-PPES is either 40 Å or 100 Å, respectively.

Recent advances in thermal wave detection and ranging for non-destructive testing and evaluation of materials

2013 ◽  
Author(s):  
Ravibabu Mulaveesala ◽  
V. S. Ghali ◽  
Vanita Arora ◽  
Juned A. Siddiqui ◽  
Amarnath Muniyappa ◽  
...  
Keyword(s):  
Thermal Wave ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Wave Detection ◽  
Recent Advances ◽  
Non Destructive ◽  
Testing And Evaluation

Stress-Temperature Behavior and Stress Relaxation in Ti/Al-0.5%Cu/TiN and TiN/W Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. Doucet ◽  
A. Brun ◽  
H. Jaouen ◽  
M. Dupeux ◽  
M. Ignat
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Yield Strength ◽  
Measurement System ◽  
Thermal Wave ◽  
Intrinsic Stress ◽  
Temperature Behavior ◽  
Induce Stress ◽  
Stress Variations ◽  
Non Destructive

AbstractThe stress behavior of two structures (Ti/Al-0.5%Cu/TiN and TiN/W) has been analyzed versus temperature up to 400 °C using the Flexus measurement system. Microstructure modifications induce stress variations with temperature. Furthermore, stress relaxation after annealing has been investigated. Al-based metallization stress is essentially due to thermal issues and reaches rapidly its yield strength whereas the W film exhibits high intrinsic stress. Microstructural observations afte deposition and after annealing have been conducted using a non destructive technique, the Thermal Wave Imager.

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