Recent progress on LWIR and VLWIR HgCdTe focal plane arrays

2005 ◽  
Author(s):  
Muren Chu ◽  
S. Terterian ◽  
D. Walsh ◽  
H. K. Gurgenian ◽  
S. Mesropian ◽  
...  
Keyword(s):  
Focal Plane ◽  
Recent Progress ◽  
Focal Plane Arrays ◽  
Vlwir Hgcdte

Development of Double-cantilever Infrared Focal Plane Arrays: Fabrication and Post-process Curvature Modification

2006 ◽  
Vol 952 ◽  
Author(s):  
Shusen Huang ◽  
I-Kuan Lin ◽  
Hu Tao ◽  
Xin Zhang
Keyword(s):  
Temperature Difference ◽  
Infrared Radiation ◽  
Focal Plane ◽  
Recent Progress ◽  
Focal Plane Arrays ◽  
Equivalent Temperature ◽  
Theoretical Limit ◽  
Infrared Focal Plane Arrays ◽  
Post Process ◽  
Noise Equivalent Temperature Difference

ABSTRACTUncooled double-cantilever microbolometers have the potential of reaching a noise-equivalent temperature difference (NETD) approaching the theoretical limit and thus have gained increasing interest. Each pixel of the device consists of two overlapping bimaterial cantilevers that deflect in opposite directions as their temperature rises due to the absorption of incident infrared radiation. This paper reports recent progress in the development of these double-cantilever focal plane arrays (FPAs), including fabrication and post-process curvature modification.

Advanced planar LWIR and VLWIR HgCdTe focal plane arrays

2004 ◽  
Author(s):  
Muren Chu ◽  
Ray H. Gurgenian ◽  
Shoghig Mesropian ◽  
Sevag Terterian ◽  
Latika Becker ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Vlwir Hgcdte

MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress

1999 ◽  
Vol 28 (6) ◽  
pp. 705-711 ◽  
Author(s):  
T. J. de Lyon ◽  
J. E. Jensen ◽  
M. D. Gorwitz ◽  
C. A. Cockrum ◽  
S. M. Johnson ◽  
...  
Keyword(s):  
Focal Plane ◽  
Recent Progress ◽  
Focal Plane Arrays ◽  
Silicon Substrates ◽  
Large Area ◽  
Infrared Focal Plane Arrays ◽  
Mbe Growth

Low dark current LWIR and VLWIR HgCdTe focal plane arrays at AIM

2016 ◽  
Author(s):  
S. Hanna ◽  
D. Eich ◽  
W. Fick ◽  
H. Figgemeier ◽  
M. Mahlein ◽  
...  
Keyword(s):  
Dark Current ◽  
Focal Plane ◽  
Focal Plane Arrays ◽  
Vlwir Hgcdte

Semiconductor YBACUO Uncooled Focal Plane Arrays

2006 ◽  
Author(s):  
Donald Butler ◽  
Zeynep Celik-Bulter
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays

Further Developments in Improved Sensitivity, Low-cost Uncooled IR Detector Focal Plane Arrays

2010 ◽  
Author(s):  
Wendy L. Sarney ◽  
John W. Little ◽  
Kimberley A. Olver ◽  
Frank E. Livingston ◽  
Krisztian Niesz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Ir Detector

Dependence of the Deformation of 128×128 InSb Focal-plane Arrays on the Silicon Readout Integrated Circuit Thickness

2015 ◽  
Vol 9 (1) ◽  
pp. 170-174 ◽  
Author(s):  
Xiaoling Zhang ◽  
Qingduan Meng ◽  
Liwen Zhang
Keyword(s):  
Thermal Shock ◽  
Indium Antimonide ◽  
Integrated Circuit ◽  
Focal Plane ◽  
Three Dimensional ◽  
Fracture Probability ◽  
Focal Plane Arrays ◽  
Thermal Shock Test ◽  
Readout Integrated Circuit ◽  
Three Dimensional Modeling

The square checkerboard buckling deformation appearing in indium antimonide infrared focal-plane arrays (InSb IRFPAs) subjected to the thermal shock tests, results in the fracturing of the InSb chip, which restricts its final yield. In light of the proposed three-dimensional modeling, we proposed the method of thinning a silicon readout integrated circuit (ROIC) to level the uneven top surface of InSb IRFPAs. Simulation results show that when the silicon ROIC is thinned from 300 μm to 20 μm, the maximal displacement in the InSb IRFPAs linearly decreases from 7.115 μm to 0.670 μm in the upward direction, and also decreases linearly from 14.013 μm to 1.612 μm in the downward direction. Once the thickness of the silicon ROIC is less than 50 μm, the square checkerboard buckling deformation distribution presenting in the thicker InSb IRFPAs disappears, and the top surface of the InSb IRFPAs becomes flat. All these findings imply that the thickness of the silicon ROIC determines the degree of deformation in the InSb IRFPAs under a thermal shock test, that the method of thinning a silicon ROIC is suitable for decreasing the fracture probability of the InSb chip, and that this approach improves the reliability of InSb IRFPAs.

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