10-W peak power from a gain-switched picosecond all-semiconductor laser

2005 ◽  
Author(s):  
Reto Haring ◽  
Thorsten Schmitt ◽  
Aude-Reine Bellancourt ◽  
Frank Lison ◽  
Kristian Lauritsen ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Peak Power

High peak power pulses from dispersion optimised modelocked semiconductor laser

2013 ◽  
Vol 49 (13) ◽  
pp. 838-839 ◽  
Author(s):  
J.C. Balzer ◽  
T. Schlauch ◽  
A. Klehr ◽  
G. Erbert ◽  
G. Tränkle ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Peak Power ◽  
High Peak ◽  
High Peak Power

High peak power femtosecond pulses from modelocked semiconductor laser in external cavity

2008 ◽  
Vol 44 (11) ◽  
pp. 678 ◽  
Author(s):  
T. Schlauch ◽  
M. Li ◽  
M.R. Hofmann ◽  
A. Klehr ◽  
G. Erbert ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Peak Power ◽  
External Cavity ◽  
High Peak ◽  
High Peak Power ◽  
Femtosecond Pulses

scholarly journals Step-Pulse Modulation of Gain-Switched Semiconductor Pulsed Laser

2019 ◽  
Vol 9 (3) ◽  
pp. 602 ◽  
Author(s):  
Bin Li ◽  
Changyan Sun ◽  
Yun Ling ◽  
Heng Zhou ◽  
Kun Qiu
Keyword(s):  
Semiconductor Laser ◽  
Peak Power ◽  
Short Pulse ◽  
Extinction Ratio ◽  
Pulse Signal ◽  
Single Pulse ◽  
Single Mode ◽  
Output Pulse ◽  
Time Domain Reflectometry ◽  
Pulse Modulation

To improve the peak power and extinction ratio and produce ultra-short pulses, a novel approach is presented in this paper offers a highly effective modulated method for a gain-switched semiconductor laser by using step-pulse signal modulation. For the purpose of single pulse output, then the effects on the output from the gain-switched semiconductor laser are studied by simulating single mode rate equation when changing the amplitude and width of the modulated signal. The results show that the proposed method can effectively accelerate the accumulation speed of the population inversion and we can acquire the output pulse with higher peak power and shorter width. Compared with the traditional rectangular wave modulation, this method is advantageous to obtain a high gain switching effect by increasing the second modulation current and reduce the pulse width to saturation at the best working point. It can be incorporated as a practical and cost-effective approach for many fields which need high extinction ratio short pulse, such as the optical time domain reflectometry.

Generation of high-peak-power sub-nanosecond 650-nm-band optical pulses based on semiconductor-laser-controlling technologies

2017 ◽  
Vol 10 (10) ◽  
pp. 102701 ◽  
Author(s):  
Jui-Hung Hung ◽  
Kazuo Sato ◽  
Yi-Cheng Fang ◽  
Lung-Han Peng ◽  
Tomomi Nemoto ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Peak Power ◽  
High Peak ◽  
High Peak Power ◽  
Optical Pulses

Two-photon bioimaging utilizing supercontinuum light generated by a high-peak-power picosecond semiconductor laser source

2007 ◽  
Vol 12 (5) ◽  
pp. 054019 ◽  
Author(s):  
Hiroyuki Yokoyama ◽  
Hiroshi Tsubokawa ◽  
Hengchang Guo ◽  
Jun-ichi Shikata ◽  
Ki-ichi Sato ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Peak Power ◽  
High Peak ◽  
Laser Source ◽  
High Peak Power ◽  
Two Photon

Two-photon bioimaging with a multi-kilowatt peak-power optical pulse source using a 1-μm wavelength mode-locked semiconductor laser

2008 ◽  
Author(s):  
Hengchang Guo ◽  
Keijiro Takashima ◽  
Aya Sato ◽  
Hiroyuki Yokoyama ◽  
Masahito Mure ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Peak Power ◽  
Optical Pulse ◽  
Pulse Source ◽  
Two Photon
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