Dark current characterization of photoconductive switches

1992 ◽  
Author(s):  
Jeff C. Adams ◽  
R. Aaron Falk ◽  
C. David Capps ◽  
Stuart G. Ferrier
Keyword(s):  
Dark Current ◽  
Photoconductive Switches

Dark current characterization of irradiated solar cells

2015 ◽  
Author(s):  
Don Walker ◽  
Yao Yue ◽  
Colin J. Mann ◽  
John Nocerino ◽  
Simon H. Liu
Keyword(s):  
Solar Cells ◽  
Dark Current

Characterization of the rod photoresponse isolated from the dark-adapted primate ERG

2001 ◽  
Vol 18 (3) ◽  
pp. 445-455 ◽  
Author(s):  
J.A. JAMISON ◽  
R.A. BUSH ◽  
B. LEI ◽  
P.A. SIEVING
Keyword(s):  
Dicarboxylic Acid ◽  
Dark Current ◽  
Wave Amplitude ◽  
Leading Edge ◽  
Horizontal Cells ◽  
Rod Photoreceptors ◽  
Receptor Response ◽  
Rod System ◽  
Best Fit

The a-wave of the human dark-adapted ERG is thought to derive from activity of rod photoreceptors. However, other sources within the retina could potentially perturb this simple equation. We investigated the extent to which the short-latency dark-adapted rod a-wave of the primate ERG is dominated by the rod photoresponse and the applicability of the phototransduction model to fit the rod a-wave. Dark-adapted Ganzfeld ERGs were elicited over a 5-log-unit intensity range using short bright xenon flashes, and the light-adapted cone responses were subtracted to isolate the rod ERG a-wave. Intravitreal 4-phosphono-butyric acid (APB) and cis-2,3-piperidine-dicarboxylic acid (PDA) were applied to isolate the photoreceptor response. The Hood and Birch version of the phototransduction model, Rmax[1 − e−I·S·(t−teff)2] , was fitted to the a-wave data while allowing Rmax and S to vary. Three principle observations were made: (1) At flash intensities ≥0.77 log sc-td-s the leading edge of the normalized rod ERG a-wave tracks the isolated photoreceptor response across the first 20 ms or up to the point of b-wave intrusion. The rod ERG a-wave was essentially identical to the isolated receptor response for all intensities that produce peak responses within 14 ms after the flash. (2) The best fit of sensitivity (S) was not affected by APB and/or PDA, suggesting that the inner retina contributes very little to the dark-adapted a-wave. (3) APB always reduced the maximum dark-adapted a-wave amplitude (by 15–30%), and PDA always increased it (by 7–15%). Using the phototransduction model, both events can be interpreted as a scaling of the photoreceptor dark current. This suggests that activity of postreceptor cells somehow influences the rod dark current, possibly by feedback through horizontal cells (although currently not demonstrated for the rod system), or by altering the ionic concentrations near the photoreceptors, or by neuromodulator effects mediated by dopamine or melatonin.

Characterization of dark current in CCD imagers

1984 ◽  
Author(s):  
G.A. Hawkins ◽  
L. Rivaud ◽  
J. Kyan
Keyword(s):  
Dark Current

Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

2002 ◽  
Vol 743 ◽  
Author(s):  
Necmi Biyikli ◽  
Orhan Aytur ◽  
Ibrahim Kimukin ◽  
Turgut Tut ◽  
Ekmel Ozbay
Keyword(s):  
Power Density ◽  
Dark Current ◽  
Reverse Bias ◽  
Low Noise ◽  
Noise Power ◽  
Cutoff Wavelength ◽  
Solar Blind ◽  
Fabrication And Characterization ◽  
Noise Power Density

AbstractWe report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Ultrafast characterization of an in‐plane gate transistor integrated with photoconductive switches

1995 ◽  
Vol 66 (10) ◽  
pp. 1228-1230 ◽  
Author(s):  
K. Ogawa ◽  
J. Allam ◽  
N. de B. Baynes ◽  
J. R. A. Cleaver ◽  
T. Mishima ◽  
...  
Keyword(s):  
Photoconductive Switches

Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration

2016 ◽  
Vol 45 (9) ◽  
pp. 4711-4715 ◽  
Author(s):  
P. Y. Song ◽  
Z. H. Ye ◽  
A. B. Huang ◽  
H. L. Chen ◽  
X. N. Hu ◽  
...  
Keyword(s):  
Dark Current ◽  
Time Integration ◽  
Si Substrate ◽  
Long Time ◽  
Long Time Integration

Characterization of current filamentation in GaAs photoconductive switches

1993 ◽  
Author(s):  
Jeff C. Adams ◽  
R. Aaron Falk ◽  
C. David Capps ◽  
Gail L. Bohnhoff-Hlavacek
Keyword(s):  
Photoconductive Switches

Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate

2004 ◽  
Vol 831 ◽  
Author(s):  
Yasuhiro Shibata ◽  
Atsushi Motogaito ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Youichiro Ohuchi ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Dark Current ◽  
Signal To Noise Ratio ◽  
Temperature Stability ◽  
Dark Current Density ◽  
Drastic Reduction ◽  
Uv Detectors ◽  
Low Dislocation Density ◽  
Fabrication And Characterization

ABSTRACTGaN ultraviolet (UV) detectors were fabricated on a freestanding GaN substrate with low dislocation density. The resulting dark current density was below 1 nA/cm-2 at -8 V reverse bias, which was about 3 orders of magnitude lower than that of a similar detector made on a sapphire substrate. Moreover, the ideality factor was nearer to unity than the device on a sapphire substrate. In addition, by comparing the GaN-based device to a commonly used Si photodetector, we found that the GaN device had a lower signal-to-noise ratio and greater temperature stability. Therefore, we found a drastic reduction of dark current by using GaN freestanding substrates and so the GaN substrate produced a more effective detector than the sapphire substrate.

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