Modeling of PSD based on Schottky-barrier junction

2005 ◽  
Author(s):  
Chilie Tan ◽  
Bin Lin ◽  
Dongyan Chen ◽  
Yuqing Chen
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Junction

A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks

1997 ◽  
Vol 9 (7) ◽  
pp. 575-578 ◽  
Author(s):  
Daniel Vanmaekelbergh ◽  
Alfred Koster ◽  
Francisco Iranzo Marín
Keyword(s):  
Schottky Barrier ◽  
Nanometer Scale ◽  
Schottky Barrier Junction

Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

2019 ◽  
Vol 797 ◽  
pp. 582-588 ◽  
Author(s):  
Neetika ◽  
Sandeep Kumar ◽  
Amit Sanger ◽  
Hemant K. Chourasiya ◽  
Ashish Kumar ◽  
...  
Keyword(s):  
Transport Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Junction ◽  
Barrier Inhomogeneities

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

2002 ◽  
Vol 389-393 ◽  
pp. 275-278 ◽  
Author(s):  
Yuuki Ishida ◽  
Mitsuhiro Kushibe ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Sadafumi Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Homoepitaxial Growth ◽  
Schottky Barrier Junction

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Nano Letters ◽  
2003 ◽  
Vol 3 (12) ◽  
pp. 1751-1755 ◽  
Author(s):  
Xiaojing Yang ◽  
Michael A. Guillorn ◽  
Derek Austin ◽  
Anatoli V. Melechko ◽  
Hongtao Cui ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Carbon Nanofiber ◽  
Schottky Barrier Junction ◽  
Fabrication And Characterization

scholarly journals Optimization of Schottky-contact process on 4H-SiC Junction Barrier Schottky (JBS) Diodes

2021 ◽  
Vol 2083 (2) ◽  
pp. 022090
Author(s):  
Qingling Li ◽  
Tao Zhu ◽  
Jialing Li ◽  
Hailiang Yan
Keyword(s):  
Schottky Barrier ◽  
Voltage Drop ◽  
Negative Impact ◽  
Contact Process ◽  
Schottky Contact ◽  
Curve Tracer ◽  
Blocking Voltage ◽  
Schottky Barrier Junction ◽  
Reverse Blocking ◽  
Schottky Rectifier

Abstract SiC Junction Barrier Schottky (JBS) Rectifier is a kind of unipolar power diode with low threshold voltage and high reverse blocking voltage. And the Schottky barrier Φ BN is a main technology parameter, which could greatly affect the forward conduction power and reverse leakage current in the JBS rectifiers. Therefore, it is necessary to balance the influence of Φ BN on the electrical characteristics of JBS rectifiers. In this paper, physical properties at the metal-semiconductor at the Schottky-contact could be optimized by the improvement of Schottky-contact process. And this optimization could significantly decrease Φ BN to reduce the on-state voltage drop V F and minimize negative impact on its reverse characteristics. After the completion of Silicon carbide JBS diodes, the static parameter electrical test was carried out on the wafer by using Keysight B1505A Power Device Analyzer/Curve Tracer. The test results show that the Schottky barrier height Φ BN of JBS Schottky rectifier manufactured by the modified Schottky foundation technology decreased from 1.19eV to 0.99eV and I R increased from 1.08μA to 3.73μA (reverse blocking voltage V R=1200V). It indicated that the power consumption of Schottky barrier junction in JBS rectifiers could be significantly reduced by about 25%, and I R could effectively be limited to less than 10μA.

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