A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks

1997 ◽  
Vol 9 (7) ◽  
pp. 575-578 ◽  
Author(s):  
Daniel Vanmaekelbergh ◽  
Alfred Koster ◽  
Francisco Iranzo Marín
Keyword(s):  
Schottky Barrier ◽  
Nanometer Scale ◽  
Schottky Barrier Junction

Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

2019 ◽  
Vol 797 ◽  
pp. 582-588 ◽  
Author(s):  
Neetika ◽  
Sandeep Kumar ◽  
Amit Sanger ◽  
Hemant K. Chourasiya ◽  
Ashish Kumar ◽  
...  
Keyword(s):  
Transport Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Junction ◽  
Barrier Inhomogeneities

Formation of ultra-shallow Ohmic contacts on n-Ge by Sb delta-doping

2011 ◽  
Vol 1305 ◽  
Author(s):  
K. Sawano ◽  
Y. Hoshi ◽  
K. Kasahara ◽  
K. Yamane ◽  
K. Hamaya ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Ohmic Contacts ◽  
Doping Profile ◽  
Nanometer Scale ◽  
Shallow Junction ◽  
Low Resistivity ◽  
Current Voltage ◽  
Delta Doping ◽  
Current Voltage Characteristics

ABSTRACTWe demonstrate low-resistivity Ohmic contacts for n-Ge with ultra-shallow junction. Using the impurity δ-doping techniques with Ge homoepitaxy on Ge(111) below 400 ºC, we can achieve a very abrupt doping profile within a nanometer-scale width. By introducing the δ-doping to atomically controlled metal/Ge contacts, the current-voltage characteristics clearly show Ohmic conductions owing to the effective tunneling through the Schottky barrier. This approach is promising for a formation technology of ultra-shallow source/drain contacts for scaled Ge devices.

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

2002 ◽  
Vol 389-393 ◽  
pp. 275-278 ◽  
Author(s):  
Yuuki Ishida ◽  
Mitsuhiro Kushibe ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Sadafumi Yoshida
Keyword(s):  
Chemical Vapor Deposition ◽  
Schottky Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Homoepitaxial Growth ◽  
Schottky Barrier Junction

Fabrication and Characterization of Carbon Nanofiber-Based Vertically Integrated Schottky Barrier Junction Diodes

Nano Letters ◽  
2003 ◽  
Vol 3 (12) ◽  
pp. 1751-1755 ◽  
Author(s):  
Xiaojing Yang ◽  
Michael A. Guillorn ◽  
Derek Austin ◽  
Anatoli V. Melechko ◽  
Hongtao Cui ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Carbon Nanofiber ◽  
Schottky Barrier Junction ◽  
Fabrication And Characterization
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