High-power highly reliable 1.06 [micro sign]m InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers

2003 ◽  
Vol 39 (8) ◽  
pp. 661 ◽  
Author(s):  
M. Yuda ◽  
J. Temmyo ◽  
T. Sasaki ◽  
M. Sugo ◽  
C. Amano
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Quantum Well Laser ◽  
Strained Quantum Well

High-power highly reliable 1.02-1.06-/spl mu/m InGaAs strained-quantum-well laser diodes

2003 ◽  
Vol 39 (12) ◽  
pp. 1515-1520 ◽  
Author(s):  
M. Yuda ◽  
T. Sasaki ◽  
J. Temmyo ◽  
M. Sugo ◽  
C. Amano
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
Strained Quantum Well

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Mode Switching ◽  
Quantum Well Laser ◽  
Highly Efficient ◽  
Tm Mode ◽  
Strained Quantum Well

High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

1988 ◽  
Vol 53 (1) ◽  
pp. 1-3 ◽  
Author(s):  
M. Kitamura ◽  
S. Takano ◽  
T. Sasaki ◽  
H. Yamada ◽  
I. Mito
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Quantum Well Laser ◽  
High Power Operation ◽  
Power Operation

Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

2015 ◽  
Vol 581 ◽  
pp. 39-47 ◽  
Author(s):  
Tetsuhide Shimizu ◽  
Yoshikazu Teranishi ◽  
Kazuo Morikawa ◽  
Hidetoshi Komiya ◽  
Tomotaro Watanabe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Magnetron Sputtering ◽  
Pulse Duration ◽  
High Power ◽  
High Hardness ◽  
Wurtzite Phase ◽  
Temperature Growth ◽  
Low Temperature Growth
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