Characterization of subsurface damage in glass and metal optics

1991 ◽  
Author(s):  
Robert S. Polvani ◽  
Christopher J. Evans
Keyword(s):  
Subsurface Damage ◽  
Metal Optics

CHARACTERIZATION OF SUBSURFACE DAMAGE OF EXPLOSIVELY INDENTED SILICON NITRIDE CERAMICS

2008 ◽  
Vol 22 (09n11) ◽  
pp. 1504-1509
Author(s):  
JONG HO KIM ◽  
HANEUL KIM ◽  
DO KYUNG KIM ◽  
SOON NAM CHANG
Keyword(s):  
Silicon Nitride ◽  
Subsurface Damage ◽  
Boundary Phase ◽  
Damage Behavior ◽  
Nitride Ceramics ◽  
Damage Response ◽  
Grain Size And Shape ◽  
Different Grain Size ◽  
Dynamic Damage

In this study, explosive indentations were used to characterize the dynamic damage behavior of silicon nitride ceramics with different microstructures. Three grades of silicon nitrides with different grain size and shape were prepared. Subsurface damage of specimens was characterized extensively using optical and electron microscopy. It was found that the dynamic damage response depends strongly on the microstructure of specimens, particularly on the glassy grain boundary phase.

Subsurface Damage Characterization of Ground Fused Silica by HF Etching Combined with Polishing Layer by Layer

2012 ◽  
Vol 39 (3) ◽  
pp. 0303007
Author(s):  
杨明红 Yang Minghong ◽  
赵元安 Zhao Yuan′an ◽  
易葵 Yi Kui ◽  
邵建达 Shao Jianda
Keyword(s):  
Fused Silica ◽  
Subsurface Damage ◽  
Layer By Layer ◽  
Damage Characterization

Subsurface Damage Profile Characterization of Si Wafers with Uv/Millimeter-Wave Technique and Light Scattering Topography

2000 ◽  
Vol 631 ◽  
Author(s):  
Takeo Katoh ◽  
Hideyuki Kondo ◽  
Yoh-Ichiro Ogita ◽  
Ken-Ichi Kobayashi ◽  
Masaki Kurokawa
Keyword(s):  
Light Scattering ◽  
Millimeter Wave ◽  
Silicon Crystal ◽  
Subsurface Damage ◽  
Hydrogen Ion ◽  
Clear Correlation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wave Technique

ABSTRACTWe have characterized subsurface damage profiles of hydrogen-ion implanted silicon wafers by using a non-contact UV/Millimeter-Wave Technique and Light Scattering Topography (LST). A subsurface damage profile that was less than one micrometer was controlled by chemical mechanical polishing after hydrogen-ion implantation. On the area with the subsurface damage, the Photoconductivity Amplitude (PCA) signals measured by the UV/Millimeter-Wave Technique drastically weakened and the haze values measured by LST increased. A clear correlation has been found between the peak depth of the subsurface damage and the haze value. The spectral analyses of the surface images obtained by Atomic Force Microscopy (AFM) were carried out in order to separate the influences of surface micro roughness and subsurface damage on the haze value. The contribution of subsurface damage to the haze value can be formulated as the convolution of the damage profile and the transparency function of the incident laser in silicon crystal.

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