XPS depth profile of ion-beam-synthesized A12O3SiO2composite oxide layers on silicon

1992 ◽  
Author(s):  
S. K. Dubey ◽  
A. D. Yadav ◽  
P. M. Raole ◽  
P. D. Prabhawalkar
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
Oxide Layers ◽  
Xps Depth Profile

Precise XPS depth profile of soda–lime–silica float glass using C60 ion beam

2011 ◽  
Vol 33 (12) ◽  
pp. 1927-1930 ◽  
Author(s):  
Yuichi Yamamoto ◽  
Kiyoshi Yamamoto
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
Soda Lime ◽  
Float Glass ◽  
Xps Depth Profile

Mechanism of induced reaction during XPS depth profile measurements of films grown by ion beam epitaxy

Vacuum ◽  
1998 ◽  
Vol 49 (2) ◽  
pp. 139-143 ◽  
Author(s):  
X Yang ◽  
Z Wu ◽  
J Zhao ◽  
H Wang ◽  
D Huang ◽  
...  
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
Induced Reaction ◽  
Xps Depth Profile

Identification of induced reaction during XPS depth profile measurements of films grown by ion beam epitaxy

Vacuum ◽  
1998 ◽  
Vol 49 (2) ◽  
pp. 133-137 ◽  
Author(s):  
Z Wu ◽  
D Huang ◽  
X Yang ◽  
J Wang ◽  
F Qin ◽  
...  
Keyword(s):  
Depth Profile ◽  
Ion Beam ◽  
Induced Reaction ◽  
Xps Depth Profile

XPS Depth Profile Analysis of ArF Immersion Resists by using C60 Ion Beam

Hyomen Kagaku ◽  
2007 ◽  
Vol 28 (7) ◽  
pp. 348-353 ◽  
Author(s):  
Yuichi YAMAMOTO ◽  
Naoko SHIROTA ◽  
Kiyoshi YAMAMOTO
Keyword(s):  
Depth Profile ◽  
Profile Analysis ◽  
Ion Beam ◽  
Depth Profile Analysis ◽  
Xps Depth Profile

Thermal stability of nickel-cobalt multilayer silicide

2005 ◽  
Vol 891 ◽  
Author(s):  
Kil Jin Han ◽  
Yu Jung Cho ◽  
Soon Young Oh ◽  
Yong Jin Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Depth Profile ◽  
Ternary Phase ◽  
Nickel Silicide ◽  
Composition Gradient ◽  
Cobalt Silicide ◽  
Nickel Cobalt ◽  
Thermal Stability Of ◽  
Xps Depth Profile

ABSTRACTIn this study, we have investigated the structure of nickel-cobalt silicide to understand its behavior at high temperature. Nickel-cobalt silicide was formed after two-step RTP at 500°C and 700°C respectively. We could observe by TEM that nickel-cobalt silicide consists of a structure which seems to be a Ni-Co-Si ternary phase. No nickel silicide phases and cobalt silicide phases were detected in nickel-cobalt silicide by XRD. From XPS depth profile, we could confirm that there is a cobalt composition gradient along the silicide.

Formation mechanism of plasmonic silver nanohexagonal particles made by galvanic displacement reaction

RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 31454-31461 ◽  
Author(s):  
Y. S. Yamamoto ◽  
Y. Fujime ◽  
N. Takahashi ◽  
S. Nakanishi ◽  
T. Itoh
Keyword(s):  
Formation Mechanism ◽  
Depth Profile ◽  
Profile Analysis ◽  
Displacement Reaction ◽  
Galvanic Displacement ◽  
Depth Profile Analysis ◽  
Galvanic Displacement Reaction ◽  
Xps Depth Profile

Multi-element XPS depth profile analysis made clear that Ag nanoscale hexagonal columns formed by newly-discovered galvanic displacement reaction are covered with Cu compounds which prevent Ag columns from fusion, resulting in stable hotspots.

Characterization of Surfaces and Thin Films by Means of an Ion Microprobe Analyzer

1986 ◽  
Vol 75 ◽  
Author(s):  
Eiichi Izumi ◽  
Yoshinori Ikebe ◽  
Hiroyasu Shichi ◽  
Hifumi Tamura
Keyword(s):  
Thin Films ◽  
Depth Profile ◽  
Ion Beam ◽  
Depth Resolution ◽  
Negative Ion ◽  
Plastic Film ◽  
Ion Microprobe ◽  
Monitoring Method ◽  
Secondary Ion

A variety of materials such as semiconductors, metals, and insulators have been analyzed by use of the Hitachi IMA-3 ion microprobe analyzer. From the depth profile of a GaAs/AQ GaAs superlattice(50Å), a depth resolution of 45Å was obtained at 2350Å below the surface. The stable depth profile of a multilayer plastic film was obtained by using the negative ion beam(O) as a primary ion for charge neutralization. Further, the usefulness of the total ion monitoring method for correcting the changing factors of secondary ion intensity is demonstrated.

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