Optical characterization of thin film laser deposition processes

1992 ◽  
Author(s):  
Peter K. Schenck ◽  
David W. Bonnell ◽  
John W. Hastie ◽  
Lawrence P. Cook ◽  
C. K. Chiang
Keyword(s):  
Thin Film ◽  
Optical Characterization ◽  
Laser Deposition ◽  
Deposition Processes

Electrical and optical characterization of multilayered thin film based on pulsed laser deposition of metal oxides

2000 ◽  
Vol 168 (1-4) ◽  
pp. 141-145 ◽  
Author(s):  
V. Marotta ◽  
S. Orlando ◽  
G.P. Parisi ◽  
A. Giardini ◽  
G. Perna ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxides ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Characterization ◽  
Laser Deposition ◽  
Multilayered Thin Film

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

2007 ◽  
Vol 101 (8) ◽  
pp. 084107 ◽  
Author(s):  
El Hassane Oulachgar ◽  
Cetin Aktik ◽  
Mihai Scarlete ◽  
Starr Dostie ◽  
Rob Sowerby ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Dielectric Thin Film
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