Robust multi-level phase shift modulation in high-speed WDM transmission

2005 ◽  
Author(s):  
Werner Rosenkranz
Keyword(s):  
Phase Shift ◽  
High Speed ◽  
Multi Level ◽  
Wdm Transmission

Aluminum Reflow Sputtering

MRS Bulletin ◽  
1995 ◽  
Vol 20 (11) ◽  
pp. 53-56 ◽  
Author(s):  
Kuniko Kikuta
Keyword(s):  
Integrated Circuit ◽  
High Speed ◽  
Lower Cost ◽  
High Reliability ◽  
Device Fabrication ◽  
Damascene Process ◽  
Aspect Ratios ◽  
Multi Level ◽  
Poor Adhesion ◽  
Lower Resistivity

The scaling of integrated-circuit device dimensions in the horizontal direction has caused an increase in aspect ratios of contact holes and vias without a corresponding scaledown in vertical dimensions. Conventional sputtering has become unreliable for handling higher aspect-ratio via/contact holes because of its poor step coverage. Several studies have attempted to overcome this problem by using W-CVD and reflow technology. The W-CVD is used for practical device fabrications. However, this technique has several problems such as poor adhesion to SiO2, poor W surface morphology, greater resistivity than Al, and the need of an etch-back process.Al reflow technology using a conventional DC magnetron sputtering system can simplify device-fabrication processes and achieve high reliability without Al/W interfaces. In particular, the Al reflow technology is profitable for multi-level interconnections in combination with a damascene process by using Al chemical mechanical polishing (CMP). These interconnections are necessary for miniaturized and high-speed devices because they provide lower resistivity than W and simplify fabrication processes, resulting in lower cost.This article describes recent Al reflow sputtering technologies as well as application of via and interconnect metallization.

Nearby Phase Search Algorithm with Reduced Complexity for Higher Order QAM Formats

2013 ◽  
Vol 760-762 ◽  
pp. 1869-1873
Author(s):  
Li Min Xia ◽  
Xian Zhou ◽  
Dong Yan ◽  
Na Na Zhang ◽  
Xiao Yun Wu
Keyword(s):  
Computational Complexity ◽  
Bit Error Rate ◽  
High Speed ◽  
Optical Transmission ◽  
Search Algorithm ◽  
Estimation Algorithm ◽  
Coherent Receivers ◽  
Multi Level ◽  
Reduced Complexity ◽  
Laser Line Width

This paper proposes a nearby phase search (NPS) algorithm based on BPS estimation algorithm in optical coherent receivers. And its suitable for arbitrary multi-level modulation. Making use of the continuity of phase change, the proposed NPS algorithm is applied to process nearby symbols by taking the pre-estimation phase of each symbol block as reference point. Compared to the traditional blind phase search (BPS) algorithm and its improved two-stage BPS algorithm, the performance of the proposed NPS algorithm is greatly improved in ultra-high speed coherent optical transmission system. By the simulation, the effectiveness and feasibility of the proposed algorithm are demonstrated in 28GBaud 16-QAM and 64-QAM system. Its shown that the computational complexity of the NPS algorithm greatly reduces in the guarantee of laser line width tolerance and bit error rate.

scholarly journals Analytical Models for the Computation of Error Probability of Multi-Level Phase Shift Keying Modulation Scheme

2021 ◽  
Vol 4 (1) ◽  
pp. 13-20
Author(s):  
Isaac A. E. ◽  
Dike H.U.
Keyword(s):  
Phase Shift ◽  
Error Probability ◽  
Error Function ◽  
Density Ratio ◽  
Analytical Models ◽  
Modulation Scheme ◽  
Noise Power ◽  
Phase Shift Keying ◽  
Shift Keying ◽  
Multi Level

In this paper, analytical models for the computation of error probability (BER) of the Multi-level Phase Shift Keying (MPSK) modulation scheme is presented. Analytical models for computing MPSK bit error probability based on Q function, error function (erf) and complementary error function (erfc) are presented. Also, an analytical model for computing the symbol error rate for MPSK is presented. Furthermore, a generalized analytical expression for BER as a function of modulation order (M) and energy per bit to noise power density ratio (Eb/No) is presented. The BER was computed for various values of M (2 ≤ M ≤ 256) and Eb/No (0 dB ≤ Eb/No ≤ 14 Db). The results showed that at Eb/No =12 dB, a BER of 9.006E-09 is realized for M =2 and M =4 whereas BER of 1.056E-01 is realized for M = 256. Also, for the same M = 2 , the value of BER decreased from 1.2501E-02 at Eb/No = 4 dB to 9.0060E-09at Eb/No =12 dB. Generally, the results showed that for the MPSK modulation scheme, for a given value of Eb/No, the lower modulation order (M) has a lower BER and for a given modulation order, (M) the BER decreases as Eb/No increases.

Design Techniques for High-Speed Multi-Level Viterbi Detectors and Trellis-Coded-Modulation Decoders

2018 ◽  
Vol 65 (10) ◽  
pp. 3529-3542 ◽  
Author(s):  
Hazar Yueksel ◽  
Matthias Braendli ◽  
Andreas Burg ◽  
Giovanni Cherubini ◽  
Roy D. Cideciyan ◽  
...  
Keyword(s):  
High Speed ◽  
Coded Modulation ◽  
Trellis Coded Modulation ◽  
Trellis Coded ◽  
Multi Level ◽  
Design Techniques

High-Speed Nonreciprocal Optical Switching Using Phase Shift Induced by Magnetostatic Surface Waves

2001 ◽  
Vol 40 (Part 1, No. 5B) ◽  
pp. 3768-3772 ◽  
Author(s):  
Rakesh Bhandari ◽  
Yasumitsu Miyazaki
Keyword(s):  
Phase Shift ◽  
Surface Waves ◽  
High Speed ◽  
Optical Switching
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