Characterization of C 70 doped poly(styrene) -b- poly(hexyl methacrylate) (PS-PHMA) thin film on c-Si substrate with a Jobin Yvon UVISEL phase- modulated spectroscopic ellipsometer (PMSE).

2004 ◽  
Author(s):  
Alan R. Kramer ◽  
Nan Yao ◽  
Vincent Pelletier
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Spectroscopic Ellipsometer ◽  
Hexyl Methacrylate

Characterization of New SBT Sol System and its thin film on the Platinum Electrode for Fram Application

1997 ◽  
Vol 493 ◽  
Author(s):  
YongSoo Choi ◽  
WooSik Kim ◽  
ChangEun Kim ◽  
WhanSik Yoo ◽  
BaeYeon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Grain Size ◽  
Platinum Electrode ◽  
Chelating Agent ◽  
Si Substrate ◽  
Electrode Area ◽  
Average Grain Size

ABSTRACTStable SBT sols for FRAM application were made from Sr-isopropoxide, Bi-acetate, and Ta-ethoxide with 2-ethoxyethanol as a solvent and chelating agent, TEA. The sol were spin-on coated on the Pt /Ti/SiO2/Si substrate. From the IR and DTA/TGA, the 2-ethoxyethanol -triethanolamine sol system is quite stable against aging. 5% excess Bi added sol and 800°C heat treatment of the thin film revealed the most crystallinity. There is a change in the orientation of thin film above 800°C heat treatment from c-axis to(105). The average grain size of thin film is very small, i.e., 40 nm at 800°C, and it has very narrow distributions, and the thickness of the coating were about 100nm, which would promise smaller electrode area and higher yield.

scholarly journals Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111, 044504 (2012)]

2013 ◽  
Vol 114 (5) ◽  
pp. 059902
Author(s):  
Z. Xu ◽  
S. F. Yoon ◽  
Y. C. Yeo ◽  
C. K. Chia ◽  
Y. B. Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Si Substrate

Growth and characterization of GaN thin film on Si substrate by thermionic vacuum arc (TVA)

2017 ◽  
Vol 4 (1) ◽  
pp. 016410 ◽  
Author(s):  
Mutlu Kundakçı ◽  
Asim Mantarcı ◽  
Erman Erdoğan
Keyword(s):  
Thin Film ◽  
Vacuum Arc ◽  
Si Substrate ◽  
Thermionic Vacuum Arc

scholarly journals Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate

2012 ◽  
Vol 111 (4) ◽  
pp. 044504 ◽  
Author(s):  
Z. Xu ◽  
S. F. Yoon ◽  
Y. C. Yeo ◽  
C. K. Chia ◽  
Y. B. Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Si Substrate

Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate

1998 ◽  
Vol 130-132 ◽  
pp. 214-220 ◽  
Author(s):  
Osamu Maida ◽  
Hideaki Yamamoto ◽  
Norio Okada ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Sio2 Thin Film ◽  
Atomically Flat

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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