Nanoscale characterization of interfacial reactions in SrRuO3 thin film on Si substrate

2001 ◽  
Vol 31 (8) ◽  
pp. 796-798 ◽  
Author(s):  
Sang Ho Oh ◽  
Chan-Gyung Park
Keyword(s):  
Thin Film ◽  
Interfacial Reactions ◽  
Si Substrate ◽  
Nanoscale Characterization ◽  
Srruo3 Thin Film

Nano-scale Interfacial Reactions of SrRuO3 Thin Film on Si (100) Substrate

2001 ◽  
Vol 666 ◽  
Author(s):  
Sang Ho Oh ◽  
Chan-Gyung Park
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Electron Probe ◽  
Interfacial Reactions ◽  
Si Substrate ◽  
Structural Variations ◽  
X Ray ◽  
Binary Oxides ◽  
Transmission Electron ◽  
Srruo3 Thin Film

ABSTRACTInterfacial reactions between SrRuO3 films and Si substrate were investigated by using field emission-transmission electron microscopy (FE-TEM). The compositional and structural variations across the interface were analyzed by using energy dispersive X-ray spectroscopy (EDS) and diffraction with an electron probe in 0.5 nm in diameter. Two constituent binary oxides of SrRuO3, i.e. SrO and RuO2, were found to react differently on Si surface: 1) SrO in stable contact with Si, and 2) RuO2 in unstable contact. The reduction of SrRuO3 to elemental Ru by Si is believed to be most favorable candidate for the reaction leading to the unstable contact of SrRuO3 on Si.

Chemical solution deposition of conductive SrRuO3 thin film on Si substrate

2004 ◽  
Vol 30 (7) ◽  
pp. 1357-1360 ◽  
Author(s):  
Hisao Suzuki ◽  
Yuki Miwa ◽  
Hidetoshi Miyazaki ◽  
Minoru Takahashi ◽  
Toshitaka Ota
Keyword(s):  
Thin Film ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Si Substrate ◽  
Solution Deposition ◽  
Srruo3 Thin Film

Elements Provide a Clue: Nanoscale Characterization of Thin-Film Composite Polyamide Membranes

2015 ◽  
Vol 7 (31) ◽  
pp. 16917-16922 ◽  
Author(s):  
Xinglin Lu ◽  
Siamak Nejati ◽  
Youngwoo Choo ◽  
Chinedum O. Osuji ◽  
Jun Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Composite ◽  
Thin Film Composite ◽  
Nanoscale Characterization ◽  
Polyamide Membranes

Preparation of heteroepitaxial SrRuO3 thin film on Si substrate and microstructure of BaTiO3-NiFe2O4 epitaxial composite thin film deposited on the SrRuO3 bottom electrode using PLD

2011 ◽  
Vol 1308 ◽  
Author(s):  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Shigeki Sawamura ◽  
Desheng Fu ◽  
Kazuo Shinozaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Composite Thin Film ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Srruo3 Thin Film ◽  
Paramagnetic Properties

ABSTRACTA “0-0 type” multiferroic BaTiO3-NiFe2O4 (BT-NF) composite thin film was prepared on SrRuO3/(La,Sr)MnO3/CeO2/YSZ/Si(001) substrate using pulsed laser deposition (PLD). Epitaxial growth of the film was confirmed using x-ray pole figure measurements. Cross-sectional TEM observations revealed that the crystal structure and morphology of the BT-NF composite thin film depends on the oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr has smaller grains than that deposited at 1.0×10-1 Torr. The magnetic and ferroelectric properties of BT-NF composite thin film were correlated with the microstructure that was controlled by oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr had paramagnetic properties with less polarization than the film deposited at 1.0×10-1 Torr.

Characterization of New SBT Sol System and its thin film on the Platinum Electrode for Fram Application

1997 ◽  
Vol 493 ◽  
Author(s):  
YongSoo Choi ◽  
WooSik Kim ◽  
ChangEun Kim ◽  
WhanSik Yoo ◽  
BaeYeon Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Grain Size ◽  
Platinum Electrode ◽  
Chelating Agent ◽  
Si Substrate ◽  
Electrode Area ◽  
Average Grain Size

ABSTRACTStable SBT sols for FRAM application were made from Sr-isopropoxide, Bi-acetate, and Ta-ethoxide with 2-ethoxyethanol as a solvent and chelating agent, TEA. The sol were spin-on coated on the Pt /Ti/SiO2/Si substrate. From the IR and DTA/TGA, the 2-ethoxyethanol -triethanolamine sol system is quite stable against aging. 5% excess Bi added sol and 800°C heat treatment of the thin film revealed the most crystallinity. There is a change in the orientation of thin film above 800°C heat treatment from c-axis to(105). The average grain size of thin film is very small, i.e., 40 nm at 800°C, and it has very narrow distributions, and the thickness of the coating were about 100nm, which would promise smaller electrode area and higher yield.

scholarly journals Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111, 044504 (2012)]

2013 ◽  
Vol 114 (5) ◽  
pp. 059902
Author(s):  
Z. Xu ◽  
S. F. Yoon ◽  
Y. C. Yeo ◽  
C. K. Chia ◽  
Y. B. Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Si Substrate
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