A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: the problem of Coulomb explosion

2004 ◽  
Author(s):  
Nadezhda M. Bulgakova ◽  
Razvan Stoian ◽  
Arkadi Rosenfeld ◽  
Wladimir Marine ◽  
Eleanor E. Campbell
Keyword(s):  
Electronic Transport ◽  
Pulsed Laser ◽  
Coulomb Explosion ◽  
Continuum Approach ◽  
General Continuum ◽  
Fast Electronic

A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: The problem of Coulomb explosion

2005 ◽  
Vol 81 (2) ◽  
pp. 345-356 ◽  
Author(s):  
N.M. Bulgakova ◽  
R. Stoian ◽  
A. Rosenfeld ◽  
I.V. Hertel ◽  
W. Marine ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Pulsed Laser ◽  
Coulomb Explosion ◽  
Continuum Approach ◽  
General Continuum ◽  
Fast Electronic

Ferromagnetism and electronic transport in epitaxial Ge1−xFexTe thin film grown by pulsed laser deposition

2013 ◽  
Vol 102 (10) ◽  
pp. 102402 ◽  
Author(s):  
J. D. Liu ◽  
X. S. Miao ◽  
F. Tong ◽  
W. Luo ◽  
Z. C. Xia
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Laser Deposition

Fast electronic transport in organic molecular solids?

1999 ◽  
Vol 17 (4) ◽  
pp. 2318-2328 ◽  
Author(s):  
N. Karl ◽  
K.-H. Kraft ◽  
J. Marktanner ◽  
M. Münch ◽  
F. Schatz ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Molecular Solids ◽  
Fast Electronic

Electronic transport and consequences for material removal in ultrafast pulsed laser ablation of materials

2004 ◽  
Vol 69 (5) ◽  
Author(s):  
N. M. Bulgakova ◽  
R. Stoian ◽  
A. Rosenfeld ◽  
I. V. Hertel ◽  
E. E. B. Campbell
Keyword(s):  
Laser Ablation ◽  
Electronic Transport ◽  
Material Removal ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Highly Conductive In4Sn3O12 Films Prepared by Pulsed Laser Deposition

2008 ◽  
Vol 1102 ◽  
Author(s):  
David H O'Neil ◽  
Vladimir Kuznetsov ◽  
Robert Jacobs ◽  
Martin O Jones ◽  
Peter P Edwards
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Electronic Transport ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates

AbstractHighly conductive (> 103 Ω-1cm-1) and transparent (∼ 90%) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass substrates held at a temperature of 500°C under varying pressures of oxygen (2.5 mTorr ≤ PO2 ≤ 15 mTorr). The crystallinity and the roughness of the films were found to increase with the pressure of oxygen used during deposition. Electron concentrations of the order of 5×1020 cm-3 and mobilities as high as 30 cm2V-1s-1 were derived from the measurement of Hall coefficients. Both the electronic transport and optical properties of the films were found to be strongly sensitive to the pressure of oxygen used during deposition.

scholarly journals General continuum approach for dissipative systems of repulsive particles

2016 ◽  
Vol 93 (6) ◽  
Author(s):  
César M. Vieira ◽  
Humberto A. Carmona ◽  
José S. Andrade ◽  
André A. Moreira
Keyword(s):  
Dissipative Systems ◽  
Continuum Approach ◽  
General Continuum
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