Near-field scanning photoluminescence microscopy of InGaN/GaN quantum structures

2004 ◽  
Author(s):  
Sudhiranjan Tripathy ◽  
Soo Jin Chua
Keyword(s):  
Near Field ◽  
Quantum Structures ◽  
Photoluminescence Microscopy ◽  
Near Field Scanning

Beyond spatial averaging: Simulations of near-field scanning spectroscopy of quantum structures with interfacial roughness

2000 ◽  
Vol 62 (16) ◽  
pp. 11071-11075 ◽  
Author(s):  
Omar Di Stefano ◽  
Salvatore Savasta ◽  
Giovanna Martino ◽  
Raffaello Girlanda
Keyword(s):  
Near Field ◽  
Quantum Structures ◽  
Spatial Averaging ◽  
Interfacial Roughness ◽  
Scanning Spectroscopy ◽  
Near Field Scanning

Near-field scanning optical microscopy

1986 ◽  
Vol 44 ◽  
pp. 642-643
Author(s):  
E. Betzig ◽  
A. Harootunian ◽  
M. Isaacson ◽  
A. Lewis
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Visible Radiation ◽  
Field Methods ◽  
Optical Elements ◽  
Optical Region ◽  
Order Of Magnitude ◽  
Nondestructive Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

Near Field EMC Scanning Method Based on an E-Field Collapse

2015 ◽  
Author(s):  
Jeff Dunnihoo ◽  
Pasi Tamminen ◽  
Toni Viheriäkoski
Keyword(s):  
Near Field ◽  
Electronic Systems ◽  
Inexpensive Method ◽  
Scanning Method ◽  
Field Information ◽  
Novel Method ◽  
Near Field Scanning

Abstract In this study we present a novel method to use a field collapse method together with fully automated near field scanning equipment to construct E- and H-field information of a system during transient ESD events. This inexpensive method provides an alternative way for system designers to validate and analyze the EMC/ESD capability of electronic systems without TLP pulsers, ESD simulators, or precision inductive current probes.

scholarly journals Improvement of spatial resolution by tilt correction in near-field scanning microwave microscopy

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035114
Author(s):  
Xianfeng Zhang ◽  
Zhe Wu ◽  
Quansong Lan ◽  
Zhiliao Du ◽  
Quanxin Zhou ◽  
...  
Keyword(s):  
Spatial Resolution ◽  
Near Field ◽  
Tilt Correction ◽  
Microwave Microscopy ◽  
Scanning Microwave Microscopy ◽  
Near Field Scanning

Raman imaging with near‐field scanning optical microscopy

1995 ◽  
Vol 67 (17) ◽  
pp. 2483-2485 ◽  
Author(s):  
C. L. Jahncke ◽  
M. A. Paesler ◽  
H. D. Hallen
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Raman Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Investigations of liquid crystals and liquid ambients using near-field scanning optical microscopy

1995 ◽  
Vol 61 (1-4) ◽  
pp. 291-294 ◽  
Author(s):  
Patrick J. Moyer ◽  
Stefan Kämmer ◽  
Karsten Walzer ◽  
Michael Hietschold
Keyword(s):  
Liquid Crystals ◽  
Optical Microscopy ◽  
Near Field ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning
Sign in / Sign up

Export Citation Format

Share Document