Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition

1995 ◽  
Vol 7 (3) ◽  
pp. 241-243 ◽  
Author(s):  
J. Yoshida ◽  
K. Kishino
2005 ◽  
Vol 475-479 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.


2007 ◽  
Vol 46 (No. 2) ◽  
pp. L34-L36 ◽  
Author(s):  
Yoshifumi Nishimoto ◽  
Koji Miura ◽  
Hideki Yagi ◽  
Dhanorm Plumwongrot ◽  
Kazuya Ohira ◽  
...  

2006 ◽  
Author(s):  
Abdelmajid Salhi ◽  
Vittorianna Tasco ◽  
Luigi Martiradonna ◽  
Giuseppe Visimberga ◽  
Laura Fortunato ◽  
...  

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