Mid-infrared light sources at room temperature based on lead chalcogenides

Author(s):  
Regine Glatthaar ◽  
Joachim Nurnus ◽  
Uwe Vetter ◽  
Dirk Szewczyk ◽  
Armin Lambrecht ◽  
...  
2012 ◽  
Vol 18 (1) ◽  
pp. 531-540 ◽  
Author(s):  
Jens Biegert ◽  
Philip K. Bates ◽  
Olivier Chalus

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev

2019 ◽  
Vol 25 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Aditya Malik ◽  
Alexander Spott ◽  
Eric J. Stanton ◽  
Jonathan D. Peters ◽  
Jeremy Daniel Kirch ◽  
...  

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5039-5043 ◽  
Author(s):  
Xiu Ying Gong ◽  
Hirofumi Kan ◽  
Takamitsu Makino ◽  
Takefumi Iida ◽  
Kenzo Watanabe ◽  
...  

Author(s):  
Tun Cao ◽  
Meng Lian ◽  
Xianchao Lou ◽  
Kuan Liu ◽  
Yaoming Guo ◽  
...  

Abstract Efficient thermal radiation in the mid-infrared (M-IR) region is of supreme importance for many applications including thermal imaging and sensing, thermal infrared light sources, infrared spectroscopy, emissivity coatings, and camouflage. The capability of controlling light makes metasurface an attractive platform for infrared applications. Recently, different metamaterials have been proposed to achieve high thermal radiation. To date, broadening of the radiation bandwidth of metasurface emitter (meta-emitter) has become a key goal to enable extensive applications. We experimentally demonstrate a broadband M-IR thermal emitter using stacked nanocavity metasurface consisting of two pairs of circular-shaped dielectric (Si3N4) – metal (Au) stacks. A high thermal radiation can be obtained by engineering the geometry of nanocavity metasurface. Such a meta-emitter provides wideband and broad angular absorptance of both p- and s-polarized light, offering a wideband thermal radiation with an average emissivity of more than 80% in the M-IR atmospheric window of 8–14 μm. The experimental illustration together with theoretical framework places a basis for designing broadband thermal emitters, which, as anticipated, will initiate a promising avenue to M-IR source.


Author(s):  
William M. J. Green ◽  
Bart Kuyken ◽  
Xiaoping Liu ◽  
Richard M. Osgood ◽  
Roel Baets ◽  
...  

2020 ◽  
Vol 28 (15) ◽  
pp. 21522 ◽  
Author(s):  
Jing Ren ◽  
Xiaosong Lu ◽  
Changgui Lin ◽  
R. K. Jain

2002 ◽  
Vol 29 (1-2) ◽  
pp. 283-289 ◽  
Author(s):  
Malin Kölhed ◽  
Michael Haberkorn ◽  
Viktor Pustogov ◽  
Boris Mizaikoff ◽  
Johannes Frank ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Hannaneh Dortaj ◽  
Mahboubeh Dolatyari ◽  
Armin Zarghami ◽  
Farid Alidoust ◽  
Ali Rostami ◽  
...  

AbstractInfrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementation of high speed camera, which makes high resolution images with normal methods, is very expensive. In this paper, a new nanostructure based on a cost-effective solution processed technology for the implementation of the high-speed mid-infrared light camera at room temperature is proposed. To this end, the chemically synthesized PbSe–PbI2 core–shell Quantum Dots (QDs) are used. In this work, a camera including 10 × 10 pixels is fabricated and synthesized QDs spin-coated on interdigitated contact (IDC) and then the fabricated system passivated by epoxy resin. Finally, using an electronic reading circuit, all pixels are converted to an image on the monitor. To model the fabricated camera, we solved Schrodinger–Poisson equations self consistently. Then output current from each pixel is modeled based on semiconductor physics and dark and photocurrent, as well as Responsivity and Detectivity, are calculated. Then the fabricated device is examined, and dark and photocurrents are measured and compared to the theoretical results. The obtained results indicate that the obtained theoretical and measured experimental results are in good agreement together. The fabricated detector is high speed with a rise time of 100 ns. With this speed, we can get 10 million frames per second; this means we can get very high-resolution images. The speed of operation is examined experimentally using a chopper that modulates input light with 50, 100, 250, and 500 Hz. It is shown that the fabricated device operates well in these situations, and it is not limited by the speed of detector. Finally, for the demonstration of the proposed device operation, some pictures and movies taken by the camera are attached and inserted in the paper.


Sign in / Sign up

Export Citation Format

Share Document