2–3 μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates

2010 ◽  
Vol 108 (10) ◽  
pp. 103105 ◽  
Author(s):  
C. H. Pan ◽  
S. D. Lin ◽  
C. P. Lee
Keyword(s):  
Quantum Wells ◽  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared ◽  
Inp Substrates

Quantum fountain infrared light sources based on intersubband emissions in quantum wells

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-161
Author(s):  
F. H. Julien ◽  
P. Boucaud ◽  
S. Sauvage ◽  
O. Gauthier-Lafaye ◽  
Z. Moussa
Keyword(s):  
Quantum Wells ◽  
Infrared Light ◽  
Light Sources

New Mid-Infrared Light Sources

2012 ◽  
Vol 18 (1) ◽  
pp. 531-540 ◽  
Author(s):  
Jens Biegert ◽  
Philip K. Bates ◽  
Olivier Chalus
Keyword(s):  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared

Integration of Mid-Infrared Light Sources on Silicon-Based Waveguide Platforms in 3.5–4.7 μm Wavelength Range

2019 ◽  
Vol 25 (6) ◽  
pp. 1-9 ◽  
Author(s):  
Aditya Malik ◽  
Alexander Spott ◽  
Eric J. Stanton ◽  
Jonathan D. Peters ◽  
Jeremy Daniel Kirch ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared ◽  
Silicon Based

Time-resolved mid-infrared photoluminescence from highly strained InAs/InGaAs quantum wells grown on InP substrates

2021 ◽  
Vol 14 (3) ◽  
pp. 032008
Author(s):  
Hisashi Sumikura ◽  
Tomonari Sato ◽  
Akihiko Shinya ◽  
Masaya Notomi
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Mid Infrared ◽  
Highly Strained ◽  
Inp Substrates

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING

2007 ◽  
Vol 06 (03n04) ◽  
pp. 241-244 ◽  
Author(s):  
D. A. FIRSOV ◽  
L. E. VOROBJEV ◽  
M. A. BARZILOVICH ◽  
V. YU. PANEVIN ◽  
I. V. MIKHAYLOV ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Light Absorption ◽  
Optical Pumping ◽  
Light Emission ◽  
Optical Excitation ◽  
Ground Level ◽  
Infrared Light ◽  
Mid Infrared ◽  
Gaas Quantum Dot

Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence spectra and interband light absorption with intensity of interband optical excitation is investigated in InAs / GaAs quantum dot structures. Optically induced intersubband mid-infrared light absorption is studied in undoped tunnel-coupled GaAs / AlGaAs quantum wells. The stabilization of the electron concentration at the ground level of tunnel-coupled quantum wells under increasing pumping level is established.

scholarly journals Wideband mid-infrared thermal emitter based on stacked nanocavity metasurfaces

2021 ◽  
Author(s):  
Tun Cao ◽  
Meng Lian ◽  
Xianchao Lou ◽  
Kuan Liu ◽  
Yaoming Guo ◽  
...  
Keyword(s):  
Thermal Radiation ◽  
Thermal Imaging ◽  
Polarized Light ◽  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared ◽  
Atmospheric Window ◽  
Thermal Emitters ◽  
Thermal Emitter ◽  
Promising Avenue

Abstract Efficient thermal radiation in the mid-infrared (M-IR) region is of supreme importance for many applications including thermal imaging and sensing, thermal infrared light sources, infrared spectroscopy, emissivity coatings, and camouflage. The capability of controlling light makes metasurface an attractive platform for infrared applications. Recently, different metamaterials have been proposed to achieve high thermal radiation. To date, broadening of the radiation bandwidth of metasurface emitter (meta-emitter) has become a key goal to enable extensive applications. We experimentally demonstrate a broadband M-IR thermal emitter using stacked nanocavity metasurface consisting of two pairs of circular-shaped dielectric (Si3N4) – metal (Au) stacks. A high thermal radiation can be obtained by engineering the geometry of nanocavity metasurface. Such a meta-emitter provides wideband and broad angular absorptance of both p- and s-polarized light, offering a wideband thermal radiation with an average emissivity of more than 80% in the M-IR atmospheric window of 8–14 μm. The experimental illustration together with theoretical framework places a basis for designing broadband thermal emitters, which, as anticipated, will initiate a promising avenue to M-IR source.

Mid-Infrared Light Sources Using Parametric Amplification in Silicon Nanophotonic Wires

2012 ◽  
Author(s):  
William M. J. Green ◽  
Bart Kuyken ◽  
Xiaoping Liu ◽  
Richard M. Osgood ◽  
Roel Baets ◽  
...  
Keyword(s):  
Parametric Amplification ◽  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared

Mid-infrared light sources at room temperature based on lead chalcogenides

2004 ◽  
Author(s):  
Regine Glatthaar ◽  
Joachim Nurnus ◽  
Uwe Vetter ◽  
Dirk Szewczyk ◽  
Armin Lambrecht ◽  
...  
Keyword(s):  
Room Temperature ◽  
Infrared Light ◽  
Light Sources ◽  
Lead Chalcogenides ◽  
Mid Infrared

scholarly journals Luminescent ion-doped transparent glass ceramics for mid-infrared light sources [invited]

2020 ◽  
Vol 28 (15) ◽  
pp. 21522 ◽  
Author(s):  
Jing Ren ◽  
Xiaosong Lu ◽  
Changgui Lin ◽  
R. K. Jain
Keyword(s):  
Glass Ceramics ◽  
Infrared Light ◽  
Light Sources ◽  
Mid Infrared ◽  
Transparent Glass
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