H atom in BaTiO3 and CaTiO3 crystals: structure, electronic properties, and diffusion

2003 ◽  
Author(s):  
Johnny Chimborazo ◽  
Milagros Castillo ◽  
Carmen Velasco ◽  
Arvids Stashans
Keyword(s):  
Electronic Properties ◽  
And Diffusion

Quasiperiodic lattice: Electronic properties, phonon properties, and diffusion

1986 ◽  
Vol 34 (2) ◽  
pp. 563-566 ◽  
Author(s):  
Mahito Kohmoto ◽  
Jayanth R. Banavar
Keyword(s):  
Electronic Properties ◽  
And Diffusion ◽  
Phonon Properties

scholarly journals The dimer-approach to characterize opto-electronic properties of and exciton trapping and diffusion in organic semiconductor aggregates and crystals

2017 ◽  
Vol 19 (20) ◽  
pp. 12604-12619 ◽  
Author(s):  
Bernd Engels ◽  
Volker Engel
Keyword(s):  
Electronic Properties ◽  
Organic Semiconductor ◽  
Main Effects ◽  
And Diffusion

We present the recently developed dimer approach which seems to include all main effects determining the photo-physics of organic semiconductor aggregates.

Depth Variation of Transport Parameters in Poly-Si Under Am1 Illumination

1990 ◽  
Vol 182 ◽  
Author(s):  
Z. Chen ◽  
L.C. Burton
Keyword(s):  
Electron Transport ◽  
Grain Boundary ◽  
Electronic Properties ◽  
Computer Modeling ◽  
Barrier Height ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Electron Lifetime ◽  
Transport Parameters ◽  
And Diffusion

Abstract; Grain boundary (GB) recombination is a controlling factor in the electronic properties of polycrystalline silicon. We would like to report computer modeling of the variation of electron transport parameters with depth, under illumination. The GB barrier height (Vg) versus photogeneration rate G and depth are presented, along with the resulting electron lifetime (π), mobility (µ) and diffusion length (L). Under AM1 illumination, Vg increases whereas -π, µ and L all decrease drastically with increasing depth. The GB trap density is used as a parameter, and strongly influences transport parameters in both dark and light cases.

scholarly journals The structures and diffusion behaviors of point defects and their influences on the electronic properties of 2D stanene

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9840-9846 ◽  
Author(s):  
Limeng Shen ◽  
Mu Lan ◽  
Xi Zhang ◽  
Gang Xiang
Keyword(s):  
Electronic Properties ◽  
Point Defects ◽  
And Diffusion ◽  
Diffusion Behaviors

During the synthesis of stanene monolayers, defects are inevitably present and always affect the properties.

First-principles investigation on the structural, electronic properties and diffusion barriers of Mg/Al doped NaCoO2as the cathode material of rechargeable sodium batteries

RSC Advances ◽  
2015 ◽  
Vol 5 (35) ◽  
pp. 27229-27234 ◽  
Author(s):  
Jingcang Su ◽  
Yong Pei ◽  
Zhenhua Yang ◽  
Xianyou Wang
Keyword(s):  
Cathode Material ◽  
Electronic Properties ◽  
First Principles ◽  
Diffusion Rate ◽  
Diffusion Barriers ◽  
Ion Diffusion ◽  
Ion Doping ◽  
Sodium Batteries ◽  
And Diffusion

Divalent Mg ion doping in NaCoO2can significantly decrease the diffusion barriers and enhance the Na ion diffusion rate.

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