Auger recombination in strained InGaAsP quantum wells with Eg = 0.7-1.6 eV

2002 ◽  
Author(s):  
Z. N. Sokolova ◽  
D. I. Gurylev ◽  
Nikita A. Pikhtin ◽  
Ilya S. Tarasov
Keyword(s):  
Quantum Wells ◽  
Auger Recombination

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

2017 ◽  
Vol 95 (12) ◽  
Author(s):  
M. Shahmohammadi ◽  
W. Liu ◽  
G. Rossbach ◽  
L. Lahourcade ◽  
A. Dussaigne ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Carrier Localization

EXCITED STATE PHOTOLUMINESCENCE IN STEPPED InGaAs/AlGaAs QUANTUM WELLS UNDER PICOSECOND EXCITATION

2003 ◽  
Vol 02 (06) ◽  
pp. 427-435
Author(s):  
V. A. SHALYGIN ◽  
L. E. VOROBJEV ◽  
V. Yu. PANEVIN ◽  
D. A. FIRSOV ◽  
S. HANNA ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Wells ◽  
Special Interest ◽  
Population Inversion ◽  
Auger Recombination ◽  
Stimulated Emission ◽  
Energy Structure ◽  
Electron Hole ◽  
Picosecond Excitation ◽  
Electron Energy Structure

The technique of photoluminescence (PL) studies based on intense picosecond excitation of electron–hole pairs is applied to investigate the electron energy structure including the positions of high-lying excited levels in stepped quantum wells (QWs). The spectra of PL in regimes of spontaneous and stimulated emission are studied under different excitation levels and light polarizations. Of special interest are intense photoluminescence signals from excited subbands. The feasibility of a e3–e2 intersubband population inversion in stepped QWs is demonstrated and the influence of Auger recombination was examined.

scholarly journals Ultrafast and band-selective Auger recombination in InGaN quantum wells

2016 ◽  
Vol 108 (14) ◽  
pp. 141105 ◽  
Author(s):  
Kristopher W. Williams ◽  
Nicholas R. Monahan ◽  
Daniel D. Koleske ◽  
Mary H. Crawford ◽  
X.-Y. Zhu
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Ingan Quantum Wells

scholarly journals Auger recombination in AlGaN quantum wells for UV light-emitting diodes

2018 ◽  
Vol 113 (7) ◽  
pp. 071107 ◽  
Author(s):  
Felix Nippert ◽  
Mohammad Tollabi Mazraehno ◽  
Matthew J. Davies ◽  
Marc P. Hoffmann ◽  
Hans-Jürgen Lugauer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting

scholarly journals Auger recombination in semiconductor quantum wells

1998 ◽  
Vol 58 (7) ◽  
pp. 4039-4056 ◽  
Author(s):  
Anatoli S. Polkovnikov ◽  
Georgy G. Zegrya
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Semiconductor Quantum Wells

Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

2013 ◽  
Vol 6 (11) ◽  
pp. 112101 ◽  
Author(s):  
Bastian Galler ◽  
Hans-Jürgen Lugauer ◽  
Michael Binder ◽  
Richard Hollweck ◽  
Yannick Folwill ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Experimental Determination ◽  
Auger Recombination ◽  
Dominant Type ◽  
Ingan Quantum Wells

Auger recombination in Si1-xGex/Si quantum wells under high-density photoexcitation

2011 ◽  
Vol 8 (3) ◽  
pp. 1049-1054 ◽  
Author(s):  
Takeshi Tayagaki ◽  
Susumu Fukatsu ◽  
Yoshihiko Kanemitsu
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
High Density
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