Auger recombination in Si1-xGex/Si quantum wells under high-density photoexcitation

2011 ◽  
Vol 8 (3) ◽  
pp. 1049-1054 ◽  
Author(s):  
Takeshi Tayagaki ◽  
Susumu Fukatsu ◽  
Yoshihiko Kanemitsu
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
High Density

scholarly journals Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells

2018 ◽  
Vol 98 (20) ◽  
Author(s):  
X. Fu ◽  
Q. Shi ◽  
M. A. Zudov ◽  
Y. J. Chung ◽  
K. W. Baldwin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Hall ◽  
High Density

Auger recombination in strained InGaAsP quantum wells with Eg = 0.7-1.6 eV

2002 ◽  
Author(s):  
Z. N. Sokolova ◽  
D. I. Gurylev ◽  
Nikita A. Pikhtin ◽  
Ilya S. Tarasov
Keyword(s):  
Quantum Wells ◽  
Auger Recombination

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells

2017 ◽  
Vol 95 (12) ◽  
Author(s):  
M. Shahmohammadi ◽  
W. Liu ◽  
G. Rossbach ◽  
L. Lahourcade ◽  
A. Dussaigne ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Carrier Localization

Subhertz spectral fluctuations from high-density excitons in coupled quantum wells

2000 ◽  
Vol 25 (8) ◽  
pp. 572 ◽  
Author(s):  
V. Negoita ◽  
D. Hackworth ◽  
D. W. Snoke ◽  
K. Eberl
Keyword(s):  
Quantum Wells ◽  
High Density ◽  
Coupled Quantum Wells

High-density effects, stimulated emission, and electrooptical properties of ZnCdSe/ZnSe single quantum wells and laser diodes

1996 ◽  
Vol 194 (1) ◽  
pp. 199-217 ◽  
Author(s):  
H. Grempel ◽  
A. Diessel ◽  
W. Ebeling ◽  
J. Gutowski ◽  
K. Schüll ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diodes ◽  
High Density ◽  
Stimulated Emission ◽  
Single Quantum ◽  
Density Effects ◽  
Electrooptical Properties

EXCITED STATE PHOTOLUMINESCENCE IN STEPPED InGaAs/AlGaAs QUANTUM WELLS UNDER PICOSECOND EXCITATION

2003 ◽  
Vol 02 (06) ◽  
pp. 427-435
Author(s):  
V. A. SHALYGIN ◽  
L. E. VOROBJEV ◽  
V. Yu. PANEVIN ◽  
D. A. FIRSOV ◽  
S. HANNA ◽  
...  
Keyword(s):  
Excited State ◽  
Quantum Wells ◽  
Special Interest ◽  
Population Inversion ◽  
Auger Recombination ◽  
Stimulated Emission ◽  
Energy Structure ◽  
Electron Hole ◽  
Picosecond Excitation ◽  
Electron Energy Structure

The technique of photoluminescence (PL) studies based on intense picosecond excitation of electron–hole pairs is applied to investigate the electron energy structure including the positions of high-lying excited levels in stepped quantum wells (QWs). The spectra of PL in regimes of spontaneous and stimulated emission are studied under different excitation levels and light polarizations. Of special interest are intense photoluminescence signals from excited subbands. The feasibility of a e3–e2 intersubband population inversion in stepped QWs is demonstrated and the influence of Auger recombination was examined.

scholarly journals Ultrafast and band-selective Auger recombination in InGaN quantum wells

2016 ◽  
Vol 108 (14) ◽  
pp. 141105 ◽  
Author(s):  
Kristopher W. Williams ◽  
Nicholas R. Monahan ◽  
Daniel D. Koleske ◽  
Mary H. Crawford ◽  
X.-Y. Zhu
Keyword(s):  
Quantum Wells ◽  
Auger Recombination ◽  
Ingan Quantum Wells
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