Boron carbide as atomic oxygen protection for the Lexan-carbon filter on the ROSAT wide-field camera

1992 ◽  
Author(s):  
Barry J. Kent ◽  
Bruce M. Swinyard ◽  
Hans-Joerg Maier ◽  
Dagmar Frischke
1992 ◽  
Author(s):  
BRUCE BANKS ◽  
SHARON RUTLEDGE ◽  
LINDA GEBAUER ◽  
CINDY LAMOREAUX

2014 ◽  
Vol 1058 ◽  
pp. 290-293
Author(s):  
Cun Hui Li ◽  
Kuo Hai Zheng ◽  
Sheng Sheng Yang ◽  
Zhong Hua Li ◽  
Dao Tan Tang

Materials used on exterior spacecraft surfaces are subjected to many environmental threats which can cause degradation, atomic oxygen is one of the most threats. We prepared organic silicon atomic-oxygen-protection film using method of polymerization. This paper presented the effects on the film structure and its durability of the preparation processing, and analyzed the polymerization theory, the film structure and composition of the film. At last, we tested the film in our ground based atomic oxygen simulator, and indicated that the film worked well.


2021 ◽  
Vol 6 (1) ◽  
pp. 3
Author(s):  
Levan Chkhartishvili ◽  
Levan Antashvili ◽  
Lasha Dalakishvili ◽  
Roin Chedia ◽  
Otar Tsagareishvili ◽  
...  

Nanocomposites based on boron carbide B4C are hard materials with wide field of applications in modern technologies. A system of first-order ordinary differential equations that simulates the process of chemical synthesis of nanopowders of B4C–TiB2 compositions containing titanium diboride (TiB2) as an additional phase is suggested and resolved numerically for a typical ratio of reaction constants. Reagents and products concentrations are found as time-functions. In this way, the optimal route of production technology of boron carbide-based nanomaterials can be identified.


2003 ◽  
Vol 42 (25) ◽  
pp. 5149 ◽  
Author(s):  
Richelieu Hemphill ◽  
Mark Hurwitz ◽  
Maria G. Pelizzo

2014 ◽  
pp. n/a-n/a
Author(s):  
Henry C. de Groh ◽  
Bernadette J. Puleo ◽  
Deborah L. Waters ◽  
Sharon K. Miller

Author(s):  
M. G. Lagally

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.


2000 ◽  
Vol 10 (PR9) ◽  
pp. Pr9-583-Pr9-588 ◽  
Author(s):  
W. A. Gooch ◽  
M. S. Burkins ◽  
G. Hauver ◽  
P. Netherwood ◽  
R. Benck
Keyword(s):  
X Ray ◽  

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