Laser interferometric method for determination of elastoplastic strain field

2003 ◽  
Author(s):  
Shibin Wang ◽  
Jingwei Tong ◽  
Mario Cottron ◽  
Linan Li ◽  
Zhiyong Wang
Keyword(s):  
Strain Field ◽  
Elastoplastic Strain ◽  
Interferometric Method ◽  
Laser Interferometric

Determination of a micromirror angular rotation using laser interferometric method

2001 ◽  
Vol 195 (1-4) ◽  
pp. 71-77 ◽  
Author(s):  
C.J. Tay ◽  
C. Quan ◽  
S.H. Wang ◽  
H.M. Shang
Keyword(s):  
Angular Rotation ◽  
Interferometric Method ◽  
Laser Interferometric

Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale

2017 ◽  
Vol 26 (1-2) ◽  
pp. 1-8
Author(s):  
Nikoletta Florini ◽  
George P. Dimitrakopulos ◽  
Joseph Kioseoglou ◽  
Nikos T. Pelekanos ◽  
Thomas Kehagias
Keyword(s):  
Finite Elements ◽  
Strain Field ◽  
Strain Distribution ◽  
Elastic Strain ◽  
Growth Direction ◽  
Current Status ◽  
Interface Plane ◽  
Fe Method ◽  
Semiconductor Nanostructure

AbstractWe are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at the interface plane and along the growth direction. Therefore, we focus on the determination of the stress-strain fields in III–V heteroepitaxial nanostructures by experimental and theoretical methods with emphasis on the numerical FE method by means of anisotropic continuum elasticity (CE) approximation. Subsequently, we present our contribution to the field by coupling FE simulations on InAs quantum dots (QDs) grown on (211)B GaAs substrate, either uncapped or buried, and GaAs/AlGaAs core-shell nanowires (NWs) grown on (111) Si, with quantitative high-resolution transmission electron microscopy (HRTEM) methods and atomistic molecular dynamics (MD) calculations. Full determination of the elastic strain distribution can be exploited for band gap tailoring of the heterostructures by controlling the content of the active elements, and thus influence the emitted radiation.

scholarly journals An approach to analysis of dynamic crack growth at bimaterial interface

2009 ◽  
Vol 36 (4) ◽  
pp. 299-327 ◽  
Author(s):  
R. Nikolic ◽  
Jelena Djokovic
Keyword(s):  
Asymptotic Analysis ◽  
Strain Field ◽  
Crack Tip ◽  
Optical Data ◽  
Bimaterial Interface ◽  
Dynamic Crack ◽  
New Approach ◽  
Shear Wave Speed ◽  
Propagating Crack

In this paper is presented the new approach to asymptotic analysis of the stress and strain fields around a crack tip that is propagating dynamically along a bimaterial interface. Through asymptotic analysis the problem is being reduced to solving the Riemann-Hilbert's problem, what yields the strain potential that is used for determination of the strain field around a crack tip. The considered field is that of a dynamically propagating crack with a speed that is between zero and shear wave speed of the less stiffer of the two materials, bound along the interface. Using the new approach in asymptotic analysis of the strain field around a tip of a dynamically propagating crack and possibilities offered by the Mathematica programming package, the results are obtained that are compared to both experimental and numerical results on the dynamic interfacial fracture known from the literature. This comparison showed that it is necessary to apply the complete expression obtained by asymptotic analysis of optical data and not only its first term as it was done in previous analyses.

Laser interferometric method for determining the carrier diffusion length in semiconductors

2015 ◽  
Vol 49 (9) ◽  
pp. 1119-1124 ◽  
Author(s):  
V. V. Manukhov ◽  
A. B. Fedortsov ◽  
A. S. Ivanov
Keyword(s):  
Diffusion Length ◽  
Interferometric Method ◽  
Carrier Diffusion ◽  
Laser Interferometric

Observation of Earth's oscillations by the laser interferometric method

2006 ◽  
Author(s):  
S. N. Bagayev ◽  
V. A. Orlov ◽  
A. V. Pyatigorets
Keyword(s):  
Interferometric Method ◽  
Laser Interferometric

Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates

2002 ◽  
Vol 92 (1) ◽  
pp. 70-76 ◽  
Author(s):  
M. A. Tagliente ◽  
L. De Caro ◽  
L. Tapfer ◽  
P. Waltereit ◽  
O. Brandt ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Quantum Wells ◽  
Strain Field ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Composition Determination
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