High-fill-factor monolithic infrared image sensor

1991 ◽  
Author(s):  
Masafumi Kimata ◽  
Naoki Yutani ◽  
Hirofumi Yagi ◽  
Junji Nakanishi ◽  
Natsuro Tsubouchi ◽  
...  
Keyword(s):  
Fill Factor ◽  
Infrared Image ◽  
Image Sensor ◽  
High Fill Factor

A high fill-factor high-SNR CMOS image sensor for IR camera applications

2011 ◽  
Author(s):  
Varun Shenoy ◽  
Daniel McBride ◽  
Sungyong Jung ◽  
Hyejin Moon ◽  
Sang-Yeon Cho
Keyword(s):  
Fill Factor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Ir Camera ◽  
High Fill Factor

A high fill factor and progressive scan PtSi Schottky-barrier IR-CCD image sensor using new wiring technology

1995 ◽  
Vol 42 (8) ◽  
pp. 1433-1440 ◽  
Author(s):  
S. Tohyama ◽  
K. Masubuchi ◽  
K. Konuma ◽  
H. Azuma ◽  
A. Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Fill Factor ◽  
Image Sensor ◽  
Ccd Image Sensor ◽  
High Fill Factor ◽  
Progressive Scan ◽  
Ccd Image

A high fill-factor low dark leakage CMOS image sensor with shared-pixel design

2014 ◽  
Author(s):  
Min-Woong Seo ◽  
Keita Yasutomi ◽  
Keiichiro Kagawa ◽  
Shoji Kawahito
Keyword(s):  
Fill Factor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
High Fill Factor

High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

2008 ◽  
Vol 1066 ◽  
Author(s):  
Yuriy Vygranenko ◽  
A. Sazonov ◽  
D. Striakhilev ◽  
J. H. Chang ◽  
G. Heiler ◽  
...  
Keyword(s):  
Fill Factor ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Low Noise ◽  
Active Matrix ◽  
Interlayer Dielectric ◽  
Sensor Performance ◽  
Data Line ◽  
High Fill Factor ◽  
Low K

ABSTRACTIn this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.

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