Thermal and optical recording property of an azo-nickel chelate thin film as short-wavelength optical recording media

2002 ◽  
Author(s):  
Yongyou Geng ◽  
Donghong Gu ◽  
Fuxi Gan
2010 ◽  
Vol 123-125 ◽  
pp. 687-690
Author(s):  
Sin Liang Ou ◽  
Po Cheng Kuo ◽  
Don Yau Chiang ◽  
Chin Yen Yeh ◽  
Shih Hsien Ma ◽  
...  

GeCu(6 nm)/Si(6 nm) bilayer recording thin film was deposited on nature oxidized silicon wafer and polycarbonate substrate by magnetron sputtering. The ZnS-SiO2 films were used as protective layers. We have studied the thermal property, crystallization mechanism, and recording characteristics of the GeCu/Si bilayer thin film. Thermal analysis shows that the GeCu/Si bilayer film has two reflectivity changes with the temperature ranges, 120 °C ~ 165 °C and 310 °C ~ 340 °C. The results of dynamic tests show that the optimum jitter values at recording speeds of 1X and 4X are 5.8% and 5.9%, respectively. The modulations at 1X and 4X recording speeds are all larger than 0.4.


2001 ◽  
Author(s):  
Shuangqing Wang ◽  
Shuyin Shen ◽  
Huijun Xu ◽  
Donghong Gu ◽  
Jinlong Yin ◽  
...  

2003 ◽  
Vol 803 ◽  
Author(s):  
Myung-Jin Kang ◽  
Chan-Gyung Park ◽  
Se-Young Choi

ABSTRACTWe present the results of optical properties of multi layer thin films as in the media of phase change optical disk data storage. Reflectance and optical contrast of multi layer thin films increased rapidly between 100 °C and 150 °C. Moreover, optical contrasts at different wavelength were also studied. The refractive index and the optical band gap decreased, while the extinction coefficient increases as the crystallization occurs. The Egopt of crystalline thin film was ∼0.6 eV lower than that of amorphous thin film. Egopt decreased as the number of stacked layer increased.


2011 ◽  
Vol 189-193 ◽  
pp. 4430-4433 ◽  
Author(s):  
Sin Liang Ou ◽  
Chin Pao Cheng ◽  
Chin Yen Yeh ◽  
Chung Jen Chung ◽  
Kuo Sheng Kao ◽  
...  

The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.


Author(s):  
S. L. Ou ◽  
P. C. Kuo ◽  
C. H. Hsiao ◽  
T. L. Tsai ◽  
S. C. Chen ◽  
...  

2003 ◽  
Author(s):  
Yiqun Wu ◽  
Yang Wang ◽  
Donghong Gu ◽  
Fuxi Gan

2003 ◽  
Vol 42 (Part 2, No. 10A) ◽  
pp. L1158-L1160 ◽  
Author(s):  
Muneyuki Naito ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu ◽  
Masaki Takashima

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