scholarly journals Fundamental studies of chemical-vapor-deposition diamond growth processes

1991 ◽  
Author(s):  
Robert W. Shaw ◽  
William B. Whitten ◽  
J. Michael Ramsey ◽  
Lee Heatherly
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Chemical Vapor Deposition Diamond ◽  
Growth Processes

scholarly journals Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth

2020 ◽  
Vol 117 (19) ◽  
pp. 194001
Author(s):  
Simon A. Meynell ◽  
Claire A. McLellan ◽  
Lillian B. Hughes ◽  
Wenbo Wang ◽  
Tom E. Mates ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Chemical Vapor Deposition Diamond

High quality chemical vapor deposition diamond growth on iron and stainless steel substrates

2002 ◽  
Vol 92 (6) ◽  
pp. 3393-3396 ◽  
Author(s):  
Eri Nakamura ◽  
Kenji K. Hirakuri ◽  
Manabu Ohyama ◽  
Gernot Friedbacher ◽  
Nobuki Mutsukura
Keyword(s):  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Chemical Vapor Deposition Diamond ◽  
High Quality ◽  
Steel Substrates

scholarly journals Unusual Dependence of the Diamond Growth Rate on the Methane Concentration in the Hot Filament Chemical Vapor Deposition Process

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 426
Author(s):  
Byeong-Kwan Song ◽  
Hwan-Young Kim ◽  
Kun-Su Kim ◽  
Jeong-Woo Yang ◽  
Nong-Moon Hwang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Methane Concentration ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Lower Growth ◽  
Filament Temperature ◽  
Diamond Phase ◽  
Hot Filament

Although the growth rate of diamond increased with increasing methane concentration at the filament temperature of 2100 °C during a hot filament chemical vapor deposition (HFCVD), it decreased with increasing methane concentration from 1% CH4 –99% H2 to 3% CH4 –97% H2 at 1900 °C. We investigated this unusual dependence of the growth rate on the methane concentration, which might give insight into the growth mechanism of a diamond. One possibility would be that the high methane concentration increases the non-diamond phase, which is then etched faster by atomic hydrogen, resulting in a decrease in the growth rate with increasing methane concentration. At 3% CH4 –97% H2, the graphite was coated on the hot filament both at 1900 °C and 2100 °C. The graphite coating on the filament decreased the number of electrons emitted from the hot filament. The electron emission at 3% CH4 –97% H2 was 13 times less than that at 1% CH4 –99% H2 at the filament temperature of 1900 °C. The lower number of electrons at 3% CH4 –97% H2 was attributed to the formation of the non-diamond phase, which etched faster than diamond, resulting in a lower growth rate.

Diamond Growth by Dual Hollow Cathode Arc Chemical Vapor Deposition

1997 ◽  
Vol 36 (Part 2, No. 10B) ◽  
pp. L1406-L1409 ◽  
Author(s):  
Gou-Tsau Liang ◽  
Franklin Chau-Nan Hong
Keyword(s):  
Chemical Vapor Deposition ◽  
Hollow Cathode ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Cathode Arc
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