High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing

2003 ◽  
Author(s):  
Hiroaki Jiroku ◽  
Mitsutoshi Miyasaka ◽  
Satoshi Inoue ◽  
Yoshifumi Tsunekawa ◽  
Tatsuya Shimoda
Keyword(s):  
High Temperature ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
High Temperature Process

Grain Enlargement of Polycrystalline Silicon by Multipulse Excimer Laser Annealing: Role of Hydrogen

2006 ◽  
Vol 45 (4A) ◽  
pp. 2726-2730 ◽  
Author(s):  
Naoya Kawamoto ◽  
Atsushi Masuda ◽  
Naoto Matsuo ◽  
Yasuhiro Seri ◽  
Toshimasa Nishimori ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Excimer laser annealing system for AMLCDs: a long laser pulse for high-performance, uniform, and stable TFT

2001 ◽  
Author(s):  
Christophe Prat ◽  
Dorian Zahorski ◽  
Youri Helen ◽  
Taieb Mohammed-Brahim ◽  
Olivier Bonnaud
Keyword(s):  
Laser Pulse ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

2015 ◽  
Vol 27 (14) ◽  
pp. 1485-1488 ◽  
Author(s):  
Chen Wang ◽  
Cheng Li ◽  
Jiangbin Wei ◽  
Guangyang Lin ◽  
Xiaoling Lan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing
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